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| 型号： | MCP1825-3302E/AT |
| 厂商： | Microchip Technology |
| 文件页数： | 8/38页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V .5A TO220-5 |
| 产品培训模块： | High Current LDOs |
| 标准包装： | 50 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3.3V |
| 输入电压： | 最高 6V |
| 电压 - 压降（标准）： | 0.21V @ 500mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 500mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-5 |
| 供应商设备封装： | TO-220-5 |
| 包装： | 管件 |
| 产品目录页面： | 666 (CN2011-ZH PDF) |
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MCP1825/MCP1825S
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V IN = V OUT(MAX) + V DROPOUT(MAX) , Note 1 , V R = 1.8V for Adjustable Output,
I OUT = 1 mA, C IN = C OUT = 4.7 μF (X7R Ceramic), T A = +25°C.
Boldface type applies for junction temperatures, T J ( Note 7 ) of -40°C to +125°C
Parameters
Sym
Min
Typ
Max
Units
Conditions
Dropout Characteristics
Dropout Voltage
V DROPOUT
—
210
350
mV
V IN(MIN) = 2.1V
Power Good Characteristics
PWRGD Input Voltage Operat-
ing Range
V PWRGD_VIN
1.0
1.2
—
—
6.0
6.0
V
T A = +25°C
T A = -40°C to +125°C
For V IN < 2.1V, I SINK = 100 μA
PWRGD Threshold Voltage
V PWRGD_TH
%V OUT
Falling Edge
(Referenced to V OUT )
89
92
95
V OUT < 2.5V Fixed,
V OUT = Adj.
90
92
94
V OUT >= 2.5V Fixed
PWRGD Threshold Hysteresis
V PWRGD_HYS
1.0
2.0
3.0
%V OUT
PWRGD Output Voltage Low
V PWRGD_L
—
0.2
0.4
V
I PWRGD SINK = 1.2 mA,
ADJ = 0V
PWRGD Leakage
PWRGD Time Delay
Detect Threshold to PWRGD
P WRGD _ LK
T PG
T VDET-PWRGD
—
—
—
1
110
200
—
—
—
nA
μs
μs
V PWRGD = V IN = 6.0V
Rising Edge
R PULLUP = 10 k Ω
V OUT = V PWRGD_TH + 20 mV
Active Time Delay
Shutdown Input
to V PWRGD_TH - 20 mV
Logic High Input
Logic Low Input
SHDN Input Leakage Current
V SHDN-HIGH
V SHDN-LOW
SHDN ILK
45
—
-0.1
—
—
±0.001
—
15
+0.1
%V IN
%V IN
μA
V IN = 2.1V to 6.0V
V IN = 2.1V to 6.0V
V IN = 6V, SHDN =V IN ,
SHDN = GND
AC Performance
Output Delay From SHDN
T OR
—
100
—
μs
SHDN = GND to V IN ,
V OUT = GND to 95% V R
Output Noise
e N
—
2.0
—
μV/ √ Hz
I OUT = 200 mA, f = 1 kHz,
C OUT = 10 μF (X7R Ceramic),
V OUT = 2.5V
Note 1:
2:
3:
4:
5:
6:
7:
The minimum V IN must meet two conditions: V IN ≥ 2.1V and V IN ≥ V OUT(MAX) + V DROPOUT(MAX).
V R is the nominal regulator output voltage for the fixed cases. V R = 1.2V, 1.8V, etc. V R is the desired set point output
voltage for the adjustable cases. V R = V ADJ * ((R 1 /R 2 )+1). Figure 4-1 .
TCV OUT = (V OUT-HIGH – V OUT-LOW ) *10 6 / (V R * Δ Temperature). V OUT-HIGH is the highest voltage measured over the
temperature range. V OUT-LOW is the lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is
tested over a load range from 1 mA to the maximum specified output current.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value that was measured with an input voltage of V IN = V OUT(MAX) + V DROPOUT(MAX) .
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e., T A , T J , θ JA ). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained
junction temperatures above 150°C can impact device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
DS22056B-page 8
? 2008 Microchip Technology Inc.
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| MCP1825-5002E/AT | 功能描述:低压差稳压器 - LDO 500 mA CMOS LDO Vout 5.0V ETR RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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