参数资料
型号: MCP1825T-3302E/DC
厂商: Microchip Technology
文件页数: 20/38页
文件大小: 0K
描述: IC REG LDO 3.3V .5A SOT223-5
产品培训模块: High Current LDOs
标准包装: 1
稳压器拓扑结构: 正,固定式
输出电压: 3.3V
输入电压: 最高 6V
电压 - 压降(标准): 0.21V @ 500mA
稳压器数量: 1
电流 - 输出: 500mA(最小)
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: SOT-223-6
供应商设备封装: SOT-223-5
包装: 标准包装
产品目录页面: 666 (CN2011-ZH PDF)
其它名称: MCP1825T-3302E/DCDKR
MCP1825/MCP1825S
5.0
5.1
APPLICATION CIRCUITS/
ISSUES
Typical Application
In addition to the LDO pass element power dissipation,
there is power dissipation within the MCP1825/
MCP1825S as a result of quiescent or ground current.
The power dissipation as a result of the ground current
can be calculated using the following equation:
The MCP1825/MCP1825S is used for applications that
require high LDO output current and a power good
output.
EQUATION 5-2:
P I ( GND ) = V IN ( MAX ) × I VIN
Where:
O ff
On
SHDN
MCP1825-2.5
1 2 3 4 5
V OUT = 2.5V @ 500 mA
R 1
10 k Ω C 2
10 μF
P I(GND
V IN(MAX)
=
=
Power dissipation due to the
quiescent current of the LDO
Maximum input voltage
3.3V
V IN
I VIN
=
Current flowing in the V IN pin
with no LDO output current
C 1
4.7 μF
(LDO quiescent current)
GND
PWRGD
The total power dissipated within the MCP1825/
MCP1825S is the sum of the power dissipated in the
FIGURE 5-1:
Typical Application Circuit.
LDO pass device and the P(I GND ) term. Because of the
5.1.1
APPLICATION CONDITIONS
CMOS construction, the typical I GND for the MCP1825/
MCP1825S is 120 μA. Operating at a maximum V IN of
Package Type
Input Voltage Range
V IN maximum
V IN minimum
V DROPOUT (max)
V OUT (typical)
I OUT
P DISS (typical)
Temperature Rise
=
=
=
=
=
=
=
=
=
TO-220-5
3.3V ± 5%
3.465V
3.135V
0.350V
2.5V
500 mA maximum
0.483W
14.2°C
3.465V results in a power dissipation of 0.12 milli-Watts
for a 2.5V output. For most applications, this is small
compared to the LDO pass device power dissipation
and can be neglected.
The maximum continuous operating junction
temperature specified for the MCP1825/MCP1825S is
+125°C . To estimate the internal junction temperature
of the MCP1825/MCP1825S, the total internal power
dissipation is multiplied by the thermal resistance from
junction to ambient (R θ JA ) of the device. The thermal
resistance from junction to ambient for the TO-220-5
package is estimated at 29.3°C/W.
5.2
5.2.1
Power Calculations
POWER DISSIPATION
EQUATION 5-3:
T J ( MAX ) = P TOTAL × R θ JA + T AMAX
The internal power dissipation within the MCP1825/
MCP1825S is a function of input voltage, output
voltage, output current and quiescent current.
Equation 5-1 can be used to calculate the internal
power dissipation for the LDO.
EQUATION 5-1:
P LDO = ( V IN ( MAX ) ) – V OUT ( MIN ) ) × I OUT ( MAX ) )
Where:
T J(MAX) = Maximum continuous junction
temperature
P TOTAL = Total device power dissipation
R θ JA = Thermal resistance from junction to
ambient
T AMAX = Maximum ambient temperature
P LDO
V IN(MAX)
V OUT(MIN)
=
=
=
LDO Pass device internal
power dissipation
Maximum input voltage
LDO minimum output voltage
DS22056B-page 20
? 2008 Microchip Technology Inc.
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