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参数资料
| 型号： | MCP1827T-3002E/ET |
| 厂商： | Microchip Technology |
| 文件页数： | 19/32页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3V 1.5A DDPAK-5 |
| 产品培训模块： | High Current LDOs |
| 标准包装： | 750 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3V |
| 输入电压： | 最高 6V |
| 电压 - 压降（标准）： | 0.33V @ 1.5A |
| 稳压器数量： | 1 |
| 电流 - 输出： | 1.5A（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-6，D²Pak（5 引线+接片），TO-263BA |
| 供应商设备封装： | DDPAK/TO-263-5 |
| 包装： | 带卷 (TR) |
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MCP1827/MCP1827S
5.0
5.1
APPLICATION
CIRCUITS/ISSUES
Typical Application
In addition to the LDO pass element power dissipation,
there is power dissipation within the
MCP1827/MCP1827S as a result of quiescent or
ground current. The power dissipation as a result of the
ground current can be calculated using the following
The MCP1827/MCP1827S is used for applications that
require high LDO output current and a power good
output.
V OUT = 2.5V @ 1.5A
equation:
EQUATION 5-2:
P I ( GND ) = V IN ( MAX ) × I VIN
Where:
On
O ff
3.3V
SHDN
V IN
C 1
4.7 μF
MCP1827-2.5
1 2 3 4 5
GND
R 1
10 k Ω
C 2
10 μF
PWRGD
P I(GND
V IN(MAX)
I VIN
=
=
=
Power dissipation due to the
quiescent current of the LDO
Maximum input voltage
Current flowing in the V IN pin
with no LDO output current
(LDO quiescent current)
FIGURE 5-1:
Typical Application Circuit.
The total power dissipated within the
MCP1827/MCP1827S is the sum of the power dissi-
5.1.1 APPLICATION CONDITIONS
Package Type = TO-220-5
Input Voltage Range = 3.3V ± 5%
V IN maximum = 3.465V
V IN minimum = 3.135V
V DROPOUT (max) = 0.550V
V OUT (typical) = 2.5V
I OUT = 1.5A maximum
P DISS (typical) = 1.2W
Temperature Rise = 35.2 ° C
pated in the LDO pass device and the P(I GND ) term.
Because of the CMOS construction, the typical I GND for
the MCP1827/MCP1827S is 120 μA. Operating at a
maximum of 3.465V results in a power dissipation of
0.49 milli-Watts. For most applications, this is small
compared to the LDO pass device power dissipation
and can be neglected.
The maximum continuous operating junction
temperature specified for the MCP1827/MCP1827S is
+125 ° C . To estimate the internal junction temperature
of the MCP1827/MCP1827S, the total internal power
dissipation is multiplied by the thermal resistance from
junction to ambient (R θ JA ) of the device. The thermal
resistance from junction to ambient for the TO-220-5
5.2
Power Calculations
package is estimated at 29.3 ° C/W.
5.2.1 POWER DISSIPATION
The internal power dissipation within the
MCP1827/MCP1827S is a function of input voltage,
output voltage, output current and quiescent current.
power dissipation for the LDO.
EQUATION 5-1:
P LDO = ( V IN ( MAX ) ) – V OUT ( MIN ) ) × I OUT ( MAX ) )
Where:
EQUATION 5-3:
T J ( MAX ) = P TOTAL × R θ JA + T AMAX
T J(MAX) = Maximum continuous junction
temperature
P TOTAL = Total device power dissipation
R θ JA = Thermal resistance from junction to
ambient
T AMAX = Maximum ambient temperature
P LDO
V IN(MAX)
V OUT(MIN)
=
=
=
LDO Pass device internal
power dissipation
Maximum input voltage
LDO minimum output voltage
? 2007 Microchip Technology Inc.
DS22001C-page 19
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