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| 型号： | MCP2140T-I/SS |
| 厂商： | Microchip Technology |
| 文件页数： | 20/58页 |
| 文件大小： | 0K |
| 描述： | IC IRDA CONTROLLR DTE/DCE 20SSOP |
| 标准包装： | 1,600 |
| 控制器类型： | IRDA 标准协议栈控制器 |
| 接口： | UART |
| 电源电压： | 3 V ~ 5.5 V |
| 电流 - 电源： | 2.2mA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-SSOP（0.209"，5.30mm 宽） |
| 供应商设备封装： | 20-SSOP |
| 包装： | 带卷 (TR) |
| 配用： | MCP2140DM-TMPSNS-ND - BOARD DEMO FOR MCP2140 |
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2003 Microchip Technology Inc.
Preliminary
DS21790A-page 27
MCP2140
4.1
DC Characteristics
DC Specifications
Electrical Characteristics:
Standard Operating Conditions (unless otherwise specified)
Operating Temperature: -40
°C ≤ TA ≤ +85°C (industrial)
Param.
No.
Sym
Characteristic
Min
Typ(1)
Max
Units
Conditions
D001
VDD
Supply Voltage
3.0
—
5.5
V
See Figure 4-1
D002
VDR
RAM Data Retention
Voltage (2)
2.0
—
V
Device Oscillator/Clock stopped
D003
VPOR
VDD Start Voltage to
ensure Power-on Reset
—
VSS
—
V
D004
SVDD
VDD Rise Rate to
ensure Power-on Reset
0.05
—
V/ms
D010
D010A
IDD
Supply Current (3, 4)
—
25
2.2
60
mA
A
VDD = 3.0V, PHACT = H
VDD = 3.0V, PHACT = L
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25
°C. This data is for design
guidance only and is not tested.
2: This is the limit to which VDD can be lowered without losing RAM data.
3: When the device is in IR communication (PHACT pin is high), supply current is mainly a function of the
operating voltage and frequency. Pin loading, pin rate and temperature have an impact on the current con-
sumption.The test conditions for all IDD measurements are made when device is:
OSC1 = external square wave, from rail-to-rail; all input pins pulled to VSS, RXIR = VDD, RESET = VDD;
4: When the device is in low power mode (PHACT pin is low), current is measured with all input pins tied to
VDD or VSS and the output pins driving a high or low level into infinite impedance.
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