参数资料
型号: MCP4132T-103E/MF
厂商: Microchip Technology
文件页数: 23/59页
文件大小: 0K
描述: IC RHEO DGTL SNGL 10K SPI 8DFN
标准包装: 3,300
接片: 129
电阻(欧姆): 10k
电路数: 1
温度系数: 标准值 150 ppm/°C
存储器类型: 易失
接口: 4 线 SPI(芯片选择)
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-EP(3x3)
包装: 带卷 (TR)
2008 Microchip Technology Inc.
DS22060B-page 3
MCP413X/415X/423X/425X
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
Voltage on VDD with respect to VSS ............... -0.6V to +7.0V
Voltage on CS, SCK, SDI, SDI/SDO, and
SHDN with respect to VSS ...................................... -0.6V to 12.5V
Voltage on all other pins (PxA, PxW, PxB, and
SDO) with respect to VSS ............................ -0.3V to VDD + 0.3V
Input clamp current, IIK
(VI < 0, VI > VDD, VI > VPP ON HV pins) ......................±20 mA
Output clamp current, IOK
(VO < 0 or VO > VDD) ..................................................±20 mA
Maximum output current sunk by any Output pin
......................................................................................25 mA
Maximum output current sourced by any Output pin
......................................................................................25 mA
Maximum current out of VSS pin .................................100 mA
Maximum current into VDD pin ....................................100 mA
Maximum current into PXA, PXW & PXB pins ............±2.5 mA
Storage temperature ....................................-65°C to +150°C
Ambient temperature with power applied
.....................................................................-40°C to +125°C
Total power dissipation (Note 1) ................................400 mW
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins
.................................. ≥ 4 kV (HBM),
..........................................................................
≥ 300V (MM)
Maximum Junction Temperature (TJ) ......................... +150°C
Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Note 1: Power dissipation is calculated as follows:
Pdis = VDD x {IDD -
∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)
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