- 您现在的位置：买卖IC网 > PDF目录9386 > MCP4261-104E/ST (Microchip Technology)IC DGTL POT DL 100K 2CH 14-TSSOP PDF资料下载
参数资料
| 型号： | MCP4261-104E/ST |
| 厂商： | Microchip Technology |
| 文件页数： | 44/88页 |
| 文件大小： | 0K |
| 描述： | IC DGTL POT DL 100K 2CH 14-TSSOP |
| 标准包装： | 96 |
| 系列： | WiperLock™ |
| 接片： | 257 |
| 电阻（欧姆）： | 100k |
| 电路数： | 2 |
| 温度系数： | 标准值 150 ppm/°C |
| 存储器类型： | 非易失 |
| 接口： | 4 线 SPI（芯片选择） |
| 电源电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 14-TSSOP |
| 包装： | 管件 |
| 产品目录页面： | 676 (CN2011-ZH PDF) |
| 其它名称： | MCP4261-104-E/ST MCP4261-104-E/ST-ND |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页当前第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页
2008 Microchip Technology Inc.
DS22059B-page 49
MCP414X/416X/424X/426X
7.5
Write Data
Normal and High Voltage
The Write command is a 16-bit command. The Write
Command can be issued to both the Volatile and
Non-Volatile memory locations. The format of the
command is shown in Figure 7-2.
A Write command to a Volatile memory location
changes that location after a properly formatted Write
Command (16-clock) have been received.
A Write command to a Non-Volatile memory location
will only start a write cycle after a properly formatted
Write Command (16-clock) have been received and the
CS pin transitions to the inactive state (VIH).
7.5.1
SINGLE WRITE TO VOLATILE
MEMORY
The write operation requires that the CS pin be in the
active state (VILor VIHH). Typically, the CS pin will be in
the inactive state (VIH) and is driven to the active state
(VIL). The 16-bit Write Command (Command Byte and
Data Byte) is then clocked in on the SCK and SDI pins.
Once all 16 bits have been received, the specified
volatile address is updated. A write will not occur if the
write command isn’t exactly 16 clocks pulses. This
protects against system issues from corrupting the
Non-Volatile memory locations.
Figure 6-3 and Figure 6-4 show possible waveforms
for a single write.
7.5.2
SINGLE WRITE TO NON-VOLATILE
MEMORY
The sequence to write to to a single non-volatile
memory location is the same as a single write to volatile
memory with the exception that after the CS pin is
driven inactive (VIH), the EEPROM write cycle (tWC) is
started. A write cycle will not start if the write command
isn’t exactly 16 clocks pulses. This protects against
system issues from corrupting the Non-Volatile
memory locations.
After the CS pin is driven inactive (VIH), the serial
interface may immediately be re-enabled by driving the
CS pin to the active state (VILor VIHH).
During an EEPROM write cycle, only serial commands
to Volatile memory (addresses 00h, 01h, 04h, and 05h)
are accepted. All other serial commands are ignored
until the EEPROM write cycle (twc) completes. This
allows the Host Controller to operate on the Volatile
Wiper registers and the TCON register, and to Read
the Status Register. The EEWA bit in the Status register
indicates the status of an EEPROM Write Cycle.
Once a write command to a Non-Volatile memory
location has been received, NO other SPI commands
should be received before the CS pin transitions to the
inactive state (VIH) or the current SPI command will
have a Command Error (CMDERR) occur.
FIGURE 7-2:
Write Command - SDI and SDO States.
Note:
Writes to certain memory locations will be
dependant on the state of the WiperLock
Technology bits and the Write Protect bit.
A
D
3
A
D
2
A
D
1
A
D
0
00
D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1111111111111111 Valid Address/Command combination
111111
0
0 Invalid Address/Command combination (1)
COMMAND BYTE
DATA BYTE
SDI
SDO
Note 1:
If an Error Condition occurs (CMDERR = L), all following SDO bits will be low until the CMDERR
condition is cleared (the CS pin is forced to the inactive state).
相关PDF资料 |
PDF描述 |
|---|---|
| VE-2NP-MW | CONVERTER MOD DC/DC 13.8V 100W |
| MCP4241-103E/ST | IC DGTL POT 10K 2CH 14TSSOP |
| VE-2NN-MW | CONVERTER MOD DC/DC 18.5V 100W |
| MCP4241-104E/SL | IC DGTL POT 100K 2CH 14SOIC |
| VE-2NM-MX-B1 | CONVERTER MOD DC/DC 10V 75W |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCP4261-502E/ML | 功能描述:数字电位计 IC Dual 7B NV SPI POT RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| MCP4261-502E/P | 功能描述:数字电位计 IC Dual 7B NV SPI POT RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| MCP4261-502-E/P | 功能描述:数字电位计 IC Dual, 7bit, NV, SPI, POT RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| MCP4261-502E/P | 制造商:Microchip Technology Inc 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE |
| MCP4261-502E/SL | 功能描述:数字电位计 IC Dual 7B NV SPI POT RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。