参数资料
型号: MCP601T-E/SN
厂商: Microchip Technology
文件页数: 33/34页
文件大小: 0K
描述: IC OPAMP SNGL 2.7V 8SOIC
标准包装: 3,300
放大器类型: 通用
电路数: 1
输出类型: 满摆幅
转换速率: 2.3 V/µs
增益带宽积: 2.8MHz
电流 - 输入偏压: 1pA
电压 - 输入偏移: 700µV
电流 - 电源: 230µA
电流 - 输出 / 通道: 22mA
电压 - 电源,单路/双路(±): 2.7 V ~ 6 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
MCP601/1R/2/3/4
DS21314G-page 8
2007 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A = +25°C, VDD = +2.7V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 100 kΩ to VL, CL = 50 pF and CS is tied low.
FIGURE 2-19:
Gain Bandwidth Product,
Phase Margin vs. Load Resistance.
FIGURE 2-20:
Output Voltage Headroom
vs. Output Current.
FIGURE 2-21:
Maximum Output Voltage
Swing vs. Frequency.
FIGURE 2-22:
DC Open-Loop Gain vs.
Temperature.
FIGURE 2-23:
Output Voltage Headroom
vs. Temperature.
FIGURE 2-24:
Output Short-Circuit Current
vs. Supply Voltage.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.E+02
1.E+03
1.E+04
1.E+05
Load Resistance ()
G
a
in
Bandwidth
Product
(M
Hz)
30
40
50
60
70
80
90
100
P
h
as
eMa
rgin,
G
=
+1
(°)
100
10k
1k
100k
VDD = 5.0V
GBWP
PM, G = +1
1
10
100
1,000
0.01
0.1
1
10
Output Current Magnitude (mA)
Out
put
Headroom
(
m
V
);
V
DD
V
OH
and
V
OL
V
SS
VDD – VOH
VOL – VSS
0.1
1
10
1.E+04
1.E+05
1.E+06
Frequency (Hz)
Max
imum
Output
Voltag
e
Swing
(V
P-
P
)
10k
100k
1M
VDD = 5.5V
VDD = 2.7V
80
90
100
110
120
130
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
DC
Open-
Loop
Gain
(
d
B)
VDD = 5.5V
VDD = 2.7V
RL = 25 k
RL = 5 k
1
10
100
1000
-50
-25
0
255075
100
125
Ambient Temperature (°C)
Output
Headroo
m
(
m
V
);
V
DD
V
OH
and
V
OL
V
SS
VDD – VOH
RL = 25 k
VDD = 5.5V
RL tied to VDD/2
VOL – VSS
RL = 5 k
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Supply Voltage (V)
Out
put
Short
Circuit
Current
M
agnit
ude
(
m
A
)
TA = –40°C
TA = +25°C
TA = +85°C
TA = +125°C
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