参数资料
型号: MCP601T-E/ST
厂商: Microchip Technology
文件页数: 12/34页
文件大小: 0K
描述: IC OPAMP SNGL 2.7V 8TSSOP
标准包装: 2,500
放大器类型: 通用
电路数: 1
输出类型: 满摆幅
转换速率: 2.3 V/µs
增益带宽积: 2.8MHz
电流 - 输入偏压: 1pA
电压 - 输入偏移: 700µV
电流 - 电源: 230µA
电流 - 输出 / 通道: 22mA
电压 - 电源,单路/双路(±): 2.7 V ~ 6 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 带卷 (TR)
MCP601/1R/2/3/4
DS21314G-page 2
2007 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
VDD –VSS ........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (VIN+, VIN–) ........ VSS –1.0VtoVDD +1.0V
All Other Inputs and Outputs ......... VSS – 0.3V to VDD +0.3V
Difference Input Voltage ...................................... |VDD –VSS|
Output Short Circuit Current .................................Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature.................................... –65°C to +150°C
Maximum Junction Temperature (TJ) ..........................+150°C
ESD Protection On All Pins (HBM; MM)
.............. ≥ 3 kV; 200V
Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, T
A = +25°C, VDD = +2.7V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, and RL = 100 kΩ to VL, and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset
Input Offset Voltage
VOS
-2
±0.7
+2
mV
Industrial Temperature
VOS
-3
±1
+3
mV
TA = -40°C to +85°C (Note 1)
Extended Temperature
VOS
-4.5
±1
+4.5
mV
TA = -40°C to +125°C (Note 1)
Input Offset Temperature Drift
ΔV
OS/ΔTA
—±2.5
V/°C TA = -40°C to +125°C
Power Supply Rejection
PSRR
80
88
dB
VDD = 2.7V to 5.5V
Input Current and Impedance
Input Bias Current
IB
—1
pA
Industrial Temperature
IB
—20
60
pA
TA = +85°C (Note 1)
Extended Temperature
IB
450
5000
pA
TA = +125°C (Note 1)
Input Offset Current
IOS
—±1
pA
Common Mode Input Impedance
ZCM
1013||6
Ω||pF
Differential Input Impedance
ZDIFF
1013||3
Ω||pF
Common Mode
Common Mode Input Range
VCMR
VSS – 0.3
VDD – 1.2
V
Common Mode Rejection Ratio
CMRR
75
90
dB
VDD = 5.0V, VCM = -0.3V to 3.8V
Open-loop Gain
DC Open-loop Gain (large signal)
AOL
100
115
dB
RL = 25 kΩ to VL,
VOUT = 0.1V to VDD – 0.1V
AOL
95
110
dB
RL = 5 kΩ to VL,
VOUT = 0.1V to VDD – 0.1V
Output
Maximum Output Voltage Swing
VOL, VOH
VSS + 15
VDD – 20
mV
RL = 25 kΩ to VL, Output overdrive = 0.5V
VOL, VOH
VSS + 45
VDD – 60
mV
RL = 5 kΩ to VL, Output overdrive = 0.5V
Linear Output Voltage Swing
VOUT
VSS + 100
VDD – 100
mV
RL = 25 kΩ to VL, AOL ≥ 100 dB
VOUT
VSS + 100
VDD – 100
mV
RL = 5 kΩ to VL, AOL ≥ 95 dB
Output Short Circuit Current
ISC
—±22
mA
VDD = 5.5V
ISC
—±12
mA
VDD = 2.7V
Power Supply
Supply Voltage
VDD
2.7
6.0
V
Quiescent Current per Amplifier
IQ
230
325
A
IO = 0
Note 1:
These specifications are not tested in either the SOT-23 or TSSOP packages with date codes older than YYWW = 0408.
In these cases, the minimum and maximum values are by design and characterization only.
2:
All parts with date codes November 2007 and later have been screened to ensure operation at VDD=6.0V. However, the
other minimum and maximum specifications are measured at 1.4V and/or 5.5V.
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