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| 型号： | MCP602T-I/ST |
| 厂商： | Microchip Technology |
| 文件页数： | 7/34页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP DUAL SNGL SUPPLY 8TSSOP |
| 标准包装： | 2,500 |
| 放大器类型： | 通用 |
| 电路数： | 2 |
| 输出类型： | 满摆幅 |
| 转换速率： | 2.3 V/µs |
| 增益带宽积： | 2.8MHz |
| 电流 - 输入偏压： | 1pA |
| 电压 - 输入偏移： | 700µV |
| 电流 - 电源： | 230µA |
| 电流 - 输出 / 通道： | 22mA |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 带卷 (TR) |
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2007 Microchip Technology Inc.
DS21314G-page 15
MCP601/1R/2/3/4
4.8.2
INSTRUMENTATION AMPLIFIER
CIRCUITS
Instrumentation amplifiers have a differential input that
subtracts one input voltage from another and rejects
common mode signals. These amplifiers also provide a
single-ended output voltage.
The three-op amp instrumentation amplifier is illustrated
in Figure 4-10. One advantage of this approach is unity-
gain operation, while one disadvantage is that the
common mode input range is reduced as R2/RG gets
larger.
FIGURE 4-10:
Three-Op Amp
Instrumentation Amplifier.
The two-op amp instrumentation amplifier is shown in
Figure 4-11. While its power consumption is lower than
the three-op amp version, its main drawbacks are that
the common mode range is reduced with higher gains
and it must be configured in gains of two or higher.
FIGURE 4-11:
Two-Op Amp
Instrumentation Amplifier.
Both instrumentation amplifiers should use a bulk
bypass capacitor of at least 1 F. The CMRR of these
amplifiers will be set by both the op amp CMRR and
resistor matching.
4.8.3
PHOTO DETECTION
The MCP601/1R/2/3/4 op amps can be used to easily
convert the signal from a sensor that produces an
output current (such as a photo diode) into a voltage (a
transimpedance amplifier). This is implemented with a
single resistor (R2) in the feedback loop of the
amplifiers shown in Figure 4-12 and Figure 4-13. The
optional capacitor (C2) sometimes provides stability for
these circuits.
A photodiode configured in the Photovoltaic mode has
zero voltage potential placed across it (Figure 4-12). In
this mode, the light sensitivity and linearity is
maximized, making it best suited for precision
applications. The key amplifier specifications for this
application are: low input bias current, low noise,
common mode input voltage range (including ground),
and rail-to-rail output.
FIGURE 4-12:
Photovoltaic Mode Detector.
In contrast, a photodiode that is configured in the
Photoconductive mode has a reverse bias voltage
across the photo-sensing element (Figure 4-13). This
decreases the diode capacitance, which facilitates
high-speed
operation
(e.g.,
high-speed
digital
communications). The design trade-off is increased
diode leakage current and linearity errors. The op amp
needs to have a wide Gain Bandwidth Product
(GBWP).
FIGURE 4-13:
Photoconductive Mode
Detector.
MCP60X
V1
MCP60X
V2
R2
R3
MCP60X
R4
R3
R4
VOUT
VREF
RG
+
–
+
–
+
V
OUT
V
1
V
2
–
() 1
2R
2
R
G
---------
+
R4
R
3
------
V
REF
+
=
MCP60X
V2
RG
R2
MCP60X
R1
VOUT
VREF
V1
R1
-
+
-
+
V
OUT
V
1
V
2
–
() 1
R
1
R
2
------
2R
1
R
G
---------
++
V
REF
+
=
D1
Light
VOUT
VDD
MCP60X
R2
C2
ID1
VOUT = ID1 R2
–
+
D1
Light
VOUT
VDD
MCP60X
R2
C2
ID1
VOUT = ID1 R2
VBIAS
VBIAS < 0V
–
+
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