参数资料
型号: MCP6032T-E/SN
厂商: Microchip Technology
文件页数: 32/34页
文件大小: 0K
描述: IC OPAMP DUAL 1.8V 8SOIC
标准包装: 3,300
放大器类型: 通用
电路数: 2
输出类型: 满摆幅
转换速率: 0.004 V/µs
增益带宽积: 10kHz
电流 - 输入偏压: 1pA
电压 - 输入偏移: 150µV
电流 - 电源: 0.9µA
电流 - 输出 / 通道: 23mA
电压 - 电源,单路/双路(±): 1.8 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
其它名称: MCP6032T-E/SNTR
2008 Microchip Technology Inc.
DS22041B-page 7
MCP6031/2/3/4
Note: Unless otherwise indicated, T
A = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF and CS is tied low.
FIGURE 2-7:
Input Noise Voltage Density
vs. Frequency.
FIGURE 2-8:
Input Noise Voltage Density
vs. Common Mode Input Voltage.
FIGURE 2-9:
Common Mode Rejection
Ratio, Power Supply Rejection Ratio vs.
Frequency.
FIGURE 2-10:
Common Mode Rejection
Ratio, Power Supply Rejection Ratio vs. Ambient
Temperature.
FIGURE 2-11:
Input Bias, Offset Currents
vs. Ambient Temperature.
FIGURE 2-12:
Input Bias Current vs.
Common Mode Input Voltage.
100
1,000
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
Frequency (Hz)
In
put
Nois
eVol
ta
g
e
D
ensity
(nV
/
Hz
)
0.1
1
10
100
1k
10k
100k
0
25
50
75
100
125
150
175
200
-0
.5
0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
6.
0
Common Mode Input Voltage (V)
In
pu
tNo
is
eV
o
lt
ag
eD
ens
it
y
(nV/
√Hz
)
f = 1 kHz
VDD = 5.5V
0
10
20
30
40
50
60
70
80
90
100
0.1
1
10
100
1000
Frequency (Hz)
CMR
R
,P
S
R
(dB)
PSRR-
PSRR+
CMRR
VDD = 5.5V
60
65
70
75
80
85
90
95
100
105
110
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
PSR
R,
C
M
RR
(
d
B)
PSRR (VDD = 1.8V to 5.5V, VCM = VSS)
CMRR (VDD = 1.8V,
VCM = -0.3V to 2.1V)
CMRR (VDD = 5.5V,
VCM = -0.3V to 5.8V)
1
10
100
1000
10000
25
45
65
85
105
125
Ambient Temperature (°C)
Input
B
ia
s
a
nd
O
ff
s
et
C
u
rre
n
ts
(pA
)
VDD = 5.5V
VCM = VDD
Input Bias Current
Input Offset Current
10
100
1000
10000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Common Mode Input Voltage (V)
Inpu
tB
ia
sC
u
rren
t(p
A)
TA = +125°C
TA = +85°C
VDD = 5.5V
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