参数资料
型号: MCP608T-I/ST
厂商: Microchip Technology
文件页数: 34/42页
文件大小: 0K
描述: IC OPAMP 2.5V R-R W/CS 8TSSOP
标准包装: 2,500
放大器类型: 通用
电路数: 1
输出类型: 满摆幅
转换速率: 0.08 V/µs
增益带宽积: 155kHz
电流 - 输入偏压: 1pA
电压 - 输入偏移: 250µV
电流 - 电源: 18.7µA
电流 - 输出 / 通道: 17mA
电压 - 电源,单路/双路(±): 2.5 V ~ 6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 带卷 (TR)
MCP606/7/8/9
DS11177F-page 4
2009 Microchip Technology Inc.
AC CHARACTERISTICS
MCP608 CHIP SELECT CHARACTERISTICS
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP608.
Electrical Characteristics: Unless otherwise indicated, V
DD = +2.5V to +5.5V, VSS =GND, TA =+25°C, VCM =VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF, and CS is tied low (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
155
kHz
Phase Margin
PM
62
°
G = +1 V/V
Slew Rate
SR
0.08
V/s
Noise
Input Noise Voltage
Eni
—2.8
VP-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—38
nV/
√Hz f = 1 kHz
Input Noise Current Density
ini
—3
fA/
√Hz
f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, V
DD = +2.5V to +5.5V, VSS =GND, TA =+25°C, VCM =VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF, and CS is tied low (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
VIL
VSS
—0.2 VDD
V
CS Input Current, Low
ICSL
-0.1
0.01
A
CS = 0.2VDD
CS High Specifications
CS Logic Threshold, High
VIH
0.8 VDD
—VDD
V
CS Input Current, High
ICSH
—0.01
0.1
A
CS = VDD
CS Input High, GND Current
ISS
-2
-0.05
A
CS = VDD
Amplifier Output Leakage, CS High
IO(LEAK)
—10
nA
CS = VDD
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
tON
9
100
s
CS = 0.2VDD to VOUT = 0.9 VDD/2,
G = +1 V/V, RL = 1 kΩ to VSS
CS High to Amplifier Output Hi-Z
tOFF
—0.1
s
CS = 0.8VDD to VOUT = 0.1 VDD/2,
G = +1 V/V, RL = 1 kΩ to VSS
CS Hysteresis
VHYST
—0.6
V
VDD = 5.0V
CS
VOUT
ISS
ICS
VIL
VIH
tON
tOFF
-50 nA
-18.7 A
-50 nA
Hi-Z
(typical)
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