参数资料
型号: MCP6N11-005E/SN
厂商: Microchip Technology
文件页数: 1/50页
文件大小: 0K
描述: IC AMP INSTR RRIO 8SOIC
标准包装: 100
放大器类型: 仪表
电路数: 1
输出类型: 满摆幅
转换速率: 9 V/µs
增益带宽积: 2.5MHz
电流 - 输入偏压: 10pA
电压 - 输入偏移: 850µV
电流 - 电源: 800µA
电流 - 输出 / 通道: 30mA
电压 - 电源,单路/双路(±): 1.8 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
2011 Microchip Technology Inc.
DS25073A-page 1
MCP6N11
Features
Rail-to-Rail Input and Output
Gain Set by 2 External Resistors
Minimum Gain (GMIN) Options:
1, 2, 5, 10 or 100 V/V
Common Mode Rejection Ratio (CMRR): 115 dB
(typical, GMIN =100)
Power Supply Rejection Ratio (PSRR): 112 dB
(typical, GMIN =100)
Bandwidth: 500 kHz (typical, Gain = GMIN)
Supply Current: 800 μA/channel (typical)
Single Channel
Enable/VOS Calibration pin: (EN/CAL)
Power Supply: 1.8V to 5.5V
Extended Temperature Range: -40°C to +125°C
Typical Applications
High Side Current Sensor
Wheatstone Bridge Sensors
Difference Amplifier with Level Shifting
Power Control Loops
Design Aids
Microchip Advanced Part Selector (MAPS)
Demonstration Board
Application Notes
Block Diagram
Description
Microchip Technology Inc. offers the single MCP6N11
instrumentation amplifier (INA) with Enable/VOS Cali-
bration pin (EN/CAL) and several minimum gain
options. It is optimized for single-supply operation with
rail-to-rail input (no common mode crossover distor-
tion) and output performance.
Two external resistors set the gain, minimizing gain
error and drift-over temperature. The reference voltage
(VREF) shifts the output voltage (VOUT).
The supply voltage range (1.8V to 5.5V) is low enough
to support many portable applications. All devices are
fully specified from -40°C to +125°C.
These parts have five minimum gain options (1, 2, 5, 10
and 100 V/V). This allows the user to optimize the input
offset voltage and input noise for different applications.
Typical Application Circuit
Package Types
RF
VFG
VOUT
Low Power
VSS
VDD
EN/CAL
VOUT
VOS Calibration
VREF
RM4
GM2
Σ
I2
VREF
I4
GM3
I3
VTR
RG
VIP
VIM
GM1
I1
VIP
VIM
POR
10
Ω
VDD
IDD
VBAT
+1.8V
to
+5.5V
VOUT
VREF
VFG
RF
RG
200 k
Ω
10 k
Ω
U1
MCP6N11
SOIC
VIP
VIM
VSS
VDD
VOUT
1
2
3
4
8
7
6
5 VREF
EN/CAL
VFG
MCP6N11
2×3 TDFN *
VIP
VIM
VSS
VDD
VOUT
1
2
3
4
8
7
6
5 VREF
EN/CAL
VFG
* Includes Exposed Thermal Pad (EP); see Table 3-1.
EP
9
500 kHz, 800 A Instrumentation Amplifier
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