参数资料
型号: MCP7940M-I/SN
厂商: Microchip Technology
文件页数: 5/19页
文件大小: 0K
描述: IC RTCC 64B I2C SRAM 8-SOIC
标准包装: 100
类型: 时钟/日历
特点: 警报器,闰年,方波输出,SRAM
存储容量: 64B
时间格式: HH:MM:SS(12/24 小时)
数据格式: YY-MM-DD-dd
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
Micrel, Inc.
SY69754AL
August 2007
13
M9999-082107-E
hbwhelp@micrel.com or (408) 955-1690
Appendix A
Layout and General Suggestions
1.
Establish controlled impedance stripline, microstrip, or
coplanar construction techniques.
2.
Signal paths should have approximately the same width
as the device pads.
3.
All differential paths are critical timing paths, where
skew should be matched to within ±10ps.
4.
Signal trace impedance should not vary more than
±5%. If in doubt, perform TDR analysis of all high-speed
signal traces.
5.
Maintain compact filter networks as close to filter pins
as possible. Provide ground plane relief under filter path
to reduce stray capacitance. Be careful of crosstalk
coupling into the filter network.
6.
Maintain low jitter on the REFCLK input. Isolate the
XTAL oscillator from power supply noise by adequately
decoupling. Keep XTAL oscillator close to device, and
minimize capacitive coupling from adjacent signals.
7.
Higher speed operation may require use of
fundamental-tone (third-overtone typically has more
jitter) crystal-based oscillator for optimum performance.
Evaluate and compare candidates by measuring
TXCLK jitter.
8.
All unused outputs require termination. To conserve
power, unused PECL outputs can be terminated with a
1k resistor to VEE.
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