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| 型号： | MCP9509HT-E/OT |
| 厂商： | Microchip Technology |
| 文件页数： | 3/28页 |
| 文件大小： | 0K |
| 描述： | IC TEMP SWITCH OD 125C SOT23-5 |
| 标准包装： | 1 |
| 感应温度： | -40°C ~ 125°C |
| 输出类型： | 开路漏极 |
| 电源电压： | 2.7 V ~ 5.5 V |
| 精确度： | ±0.5°C |
| 封装/外壳： | SC-74A，SOT-753 |
| 供应商设备封装： | SOT-23-5 |
| 包装： | 标准包装 |
| 产品目录页面： | 682 (CN2011-ZH PDF) |
| 其它名称： | MCP9509HT-E/OTDKR |
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MCP9509/10
1.0
ELECTRICAL
CHARACTERISTICS
?Notice: Stresses above those listed under “Maximum
ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
V DD .................................................................................. 6.0V
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Voltage at all Input/Output pins ............... GND – 0.3V to 6.0V
Input/Output Current .....................................................20 mA
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-40°C to +125°C
Junction Temperature (T J ) .......................................... +150°C
ESD protection on all pins (HBM:MM) ................. (4 kV/400V)
Latch-Up Current at each pin (25°C) ....................... ±200 mA
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V DD = 2.7V to 5.5V, T A = -40°C to +125°C, and
GND = Ground.
Parameters
Sym
Min
Typ
Max
Unit
Conditions
Sensor Accuracy
T A = + 25°C, +45°C
0°C ≤ T A ≤ +125°C
-20°C ≤ T A ≤ +125°C
-40°C ≤ T A ≤ +125°C
T ACY
—
-3.5
-4.5
—
±0.5
±1
±1
±2
—
+3.5
+4.5
—
°C
°C
°C
°C
Note 1
Power Supply
Operating Voltage
Operating Current (MCP9509)
V DD
I DD
2.7
—
—
30
5.5
50
V
μA
Operating Current (MCP9510)
I DD
—
—
50
100
80
165
μA
μA
OUTSET = GND or V DD
OUTSET = Unconnected
Hysteresis
Trip Point Hysteresis
Hysteresis Select:
Input (HYST) Thresholds
Hysteresis Input (HYST) Leakage
T HYST
V IH
V IL
I Leak
—
—
V DD - 0.4
—
—
+2
+10
—
—
1
—
—
—
0.4
—
°C
°C
V
V
μA
HYST = GND
HYST = V DD
MCP9510 Output Control Input (OUTSET Input)
OUTSET Input Voltage Threshold and Output Configuration
Push-Pull, Active Low
V OSET
GND
—
0.2V DD
V
Open-Drain with R OUT , Active
0.45V DD
—
0.7V DD
V
or OUTSET Unconnected
Low
Push-Pull, Active High
0.85V DD
—
V DD
V
OUTSET Input Leakage and Output Configuration
Push-Pull, Active Low
Open-Drain, Active Low
Push-Pull, Active High
OUTSET Input Impedance
I Leak
Z OUTSET
—
—
—
—
—
10
0
7
-10
500
—
—
—
—
—
μA
μA
μA
μA
k Ω
GND ≤ V OSET ≤ 0.2V DD
Unconnected (i.e. open)
0.4V DD ≤ V OSET ≤ 0.7V DD
0.85 ≤ V OSET ≤ V DD
Note 1:
This specification is tested at mid supply of 4.1V for optimum operation across the supply voltage range of
2.7V to 5.5V.
? 2008 Microchip Technology Inc.
DS22114A-page 3
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