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参数资料
| 型号： | MCT5210.SD |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | SURFACE MOUNT, DIP-6 |
| 文件页数： | 1/14页 |
| 文件大小： | 304K |
| 代理商： | MCT5210.SD |
6/10/03
Page 1 of 11
2003 Fairchild Semiconductor Corporation
MCT5200
MCT5201
MCT5210
MCT5211
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
Description
The MCT52XX series consists of a high-efciency AlGaAs, infrared emitting
diode, coupled with an NPN phototransistor in a six pin dual-in-line package.
The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering
250% CTRCE(SAT) with 1 mA of LED input current. When an LED input
current of 1.6 mA is supplied data rates to 20K bits/s are possible.
The MCT52XX can easily interface LSTTL to LSTTL/TTL, and with use of an
external base to emitter resistor data rates of 100K bits/s can be achieved.
Features
High CTRCE(SAT) comparable to Darlingtons
CTR guaranteed 0°C to 70°C
High common mode transient rejection 5kV/s
Data rates up to 150 kbits/s (NRZ)
Underwriters Laboratory (UL) recognized (le #E90700)
VDE recognized (le #94766)
– Add option 300 (e.g., MCT5211.300)
Applications
CMOS to CMOS/LSTTL logic isolation
LSTTL to CMOS/LSTTL logic isolation
RS-232 line receiver
Telephone ring detector
AC line voltage sensing
Switching power supply
Parameters
Symbol
Device
Value
Units
TOTAL DEVICE
Storage Temperature
TSTG
All
-55 to +150
°C
Operating Temperature
TOPR
All
-55 to +100
°C
Lead Solder Temperature
TSOL
All
260 for 10 sec
°C
Total Device Power Dissipation @ 25°C (LED plus detector)
PD
All
260
mW
Derate Linearly From 25°C
3.5
mW/°C
EMITTER
Continuous Forward Current
IF
All
50
mA
Reverse Input Voltage
VR
All
6
V
Forward Current - Peak (1 s pulse, 300 pps)
IF(pk)
All
3.0
A
LED Power Dissipation
PD
All
75
mW
Derate Linearly From 25°C
All
1.0
mW/°C
DETECTOR
Continuous Collector Current
IC
All
150
mA
Detector Power Dissipation
PD
All
150
mW
Derate Linearly from 25°C
All
2.0
mW/°C
SCHEMATIC
6
1
6
1
6
1
2
6
5 COL
4 EMITTER
BASE
ANODE
CATHODE
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCT5210SM | 功能描述:高速光耦合器 Phototrans LoCurrent RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
| MCT5210SVM | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR OUTPUT, SURFACE MOUNT LEAD BEND, VDE - Bulk |
| MCT5210TM | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR OUTPUT, 0.4 INCH LEAD BEND - Bulk |
| MCT5210TVM | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR OUTPUT, 0.4 INCH LEAD BEND, VDE - Bulk |
| MCT5210VM | 功能描述:高速光耦合器 6P DIP Optocoupler Phototrans LoCurrent RoHS:否 制造商:Avago Technologies 电流传递比: 最大波特率: 最大正向二极管电压:1.75 V 最大反向二极管电压:5 V 最大功率耗散:40 mW 最大工作温度:+125 C 最小工作温度:- 40 C 封装 / 箱体:SOIC-5 封装:Tube |
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