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参数资料
| 型号： | MCZ33198EFR2 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 13/17页 |
| 文件大小： | 0K |
| 描述： | IC TMOS DRIVER AUTO HISIDE 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端 |
| 输入类型： | 非反相 |
| 延迟时间： | 1ms |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 7 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
FUNCTIONAL DESCRIPTION
INTRODUCTION
the switch off time can be long, compared to the on-switching
time response. This is due to the 110mA gate discharge
current. To improve this parameter, a resistor can be added
Table 6. Switching Off Characteristics with MOSFET
Additional Gate Resistor
in parallel with the gate of the MOSFET. See Figures 16 and
17 .
Vbat
Vbat
R GATE (R G )
No R
VCC (V)
7.0
10
14
20
7.0
V GATE (V)
16
23
28
34
14
T OFF ( μ s ec)
450
700
750
780
160
4
1
1K
68 k ?
10
14
22
27
230
230
20
33
220
3
Rg
LOAD
39 k ?
7.0
10
13
21
100
160
Figure 16. Schematic with R GATE Resistor
14
20
7.0
26
32
11
160
150
30
5V
INPUT SIGNAL PIN7
0V
15 k ?
10
14
20
17.5
24
28.5
50
50
50
Vcc + 15V typ
Vgate WITHOUT Rgate
Notes
1. Time from negative edge of input signal (Pin 7) to negative
edge of gate voltage (Pin 4) measured at 5V threshold.
2. Gate discharge time, not LOAD switching OFF time.L
0V
Vgate WITH Rgate
3. TMOS used is Freescale MTP50N06, load 10 ? resistor.
Toff
Figure 17. R GATE Signal Comparison
Toff
REVERSE BATTERY
The device does not sustain reverse battery operation for
V CC voltages greater than - 0.6V in magnitude. In application,
pin 5 should be protected from reverse battery by connecting
This resistor will reduce (in some way) the charge pump
output voltage available for the MOSFET, but the device will
still provide enough Gate-to-Source voltage to maintain the
MOSFET “on” in good conditions. The resistor will mainly act
as an additional discharge current, which will reduce the
switch off time of the overall application. See the Table 6,
a diode in series with the V BAT line.
Vbat
Vbat
Switching Off Characteristics with MOSFET Additional Gate
Resistor and Figure 15 , which show the pin 4 voltage
depending on the additional gate resistor and the off
5
VCC
DRN 2
R drn
switching time due to this resistor.
If a very low switching time is needed, the resistor has to
be an extremely low value, resulting in low gate voltage not
6 STATUS
GATE 4
high enough to ensure proper MOSFET operation. In this
case, a logic level MOSFET can be used. Logic levels will
operate with V GS of 5.0V, with the same performance as a
standard MOSFET having a 12V V GS . Care should be taken
7 INPUT
GND
3
SOURCE 1
TIMER
8
C
1K
LOAD
regarding the maximum gate to source voltage of a logic level
MOSFET. An additional zener might be necessary to prevent
gate oxide damage.
Figure 18. 33198 Reverse Battery
33198
Analog Integrated Circuit Device Data
Freescale Semiconductor
13
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