参数资料
型号: MCZ33285EFR2
厂商: Freescale Semiconductor
文件页数: 5/13页
文件大小: 0K
描述: IC TMOS DRIVER DUAL HISIDE 8SOIC
标准包装: 2,500
配置: 高端
输入类型: 非反相
配置数: 2
输出数: 2
电源电压: 7 V ~ 40 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions T A from -40 ° C ≤ 125 ° C, V CC from 7 V ≤ 20 V, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T A = 25 ° C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
OVERVOLTAGE AND OVER CURRENT
Load Dump Activation Time
Error Voltage Threshold
t OUT2ACT
V DRN - V SRC
300
1.12
460
620
1.44
ms
V
SRC PIN 1
Leakage Current
Leakage Current Detection Time
ILC DET
tLC DET
15
130
30
200
50
270
mA
μ A
DRN PIN 3
Operating Current (7.0 V < V DRN < 20 V)
Leakage Current (0 V < V DRN < 20 V, V VCC < 4.0 V)
I DRN
I LEAK-DRN
-5.0
1.5
5.0
mA
μ A
OUT1, PIN 2, AND OUT2 PIN 4
Output ON Voltage. Charge Pump ON
Turn OFF Current, V OUT > 0.5 V
V ON
I OUTOFF
66
110
V CC + 15
154
V
μ A
V CC PIN 6
Supply Voltage Range
Quiescent Supply Current at V CC = 20 V
V CC
I CC
7.0
40
10
V
mA
IN PIN 8
Input Low Voltage OUT1
Input High Voltage OUT1
Input Hysteresis OUT1 and OUT2
Input Pull Down Current, 0.7 V < V IN < 6.0 V
Open Input Voltage
Input Low Voltage OUT2
Input High Voltage OUT2
V IL
V IH
V HYS
I IN
V IOP
V IL2
V IH2
1.7
0.4
7.5
3.9
15
0.7
16.5
0.7
3.0
V
V
V
μ A
V
V
V
33285
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
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