参数资料
型号: MCZ33661EF
厂商: Freescale Semiconductor
文件页数: 21/22页
文件大小: 0K
描述: IC INTERFACE PHYSICAL LIN 8-SOIC
标准包装: 98
系列: *
应用: *
接口: *
电源电压: *
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
安装类型: 表面贴装
Analog Integrated Circuit Device Data
8
Freescale Semiconductor
33661
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
SLEEP MODE AND WAKE-UP TIMINGS
EN Pin Wake-up Time (9)
tLWUE
5.0
15
s
WAKE Pin Filter Time (10)
tWF
10
70
s
LIN Pin Wake-up Filter Time (LIN Bus Wake-Up) (11)
tWUF
40
70
120
s
Sleep Mode Delay Time (12)
EN HIGH-to-LOW
tSD
50
s
Delay for INH Turning off When Device Enters in Sleep Mode(16), (17)
EN HIGH-to-LOW and INH HIGH-to-LOW
tSD_INH
50
s
Delay Time Between EN and TXD for Mode Selection (13), (14)
tD_MS
5.0
s
Delay Time Between First TXD after Device Mode Selection (13), (14)
tD_COM
50
s
FAST BAUD RATE TIMING
Delay Entering Fast Baud Rate Using Toggle Function (15)
EN LOW to EN HIGH
t1
35
s
Delay on EN Pin Resetting Fast Baud Rate to Previous Baud Rate (15)
EN LOW to EN HIGH
t2
5.0
s
Notes
9.
See Figures 7 and 8, 10.
10.
11.
12.
13.
14.
This parameter is guaranteed by design; however, it is not production tested.
15.
16.
No capacitor is connected to the INH pin. Measurement is done between the EN HIGH-to-LOW transition at 80% of INH voltage.
17.
Table 4. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V
VSUP 18 V, -40C TA 125C, GND = 0 V, unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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