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参数资料
| 型号： | MCZ33661EFR2 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 21/22页 |
| 文件大小： | 0K |
| 描述： | IC LIN INTERFACE PHYSICAL 8-SOIC |
| 标准包装： | 2,500 |
| 系列： | * |
| 应用： | * |
| 接口： | * |
| 电源电压： | * |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 安装类型： | 表面贴装 |
Analog Integrated Circuit Device Data
8
Freescale Semiconductor
33661
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
SLEEP MODE AND WAKE-UP TIMINGS
EN Pin Wake-up Time (9)
tLWUE
—
5.0
15
s
WAKE Pin Filter Time (10)
tWF
10
—
70
s
LIN Pin Wake-up Filter Time (LIN Bus Wake-Up) (11)
tWUF
40
70
120
s
Sleep Mode Delay Time (12)
EN HIGH-to-LOW
tSD
50
—
s
Delay for INH Turning off When Device Enters in Sleep Mode(16), (17)
EN HIGH-to-LOW and INH HIGH-to-LOW
tSD_INH
—
50
s
tD_MS
5.0
—
s
Delay Time Between First TXD after Device Mode Selection (13), (14)
tD_COM
50
—
s
FAST BAUD RATE TIMING
Delay Entering Fast Baud Rate Using Toggle Function (15)
EN LOW to EN HIGH
t1
—
35
s
Delay on EN Pin Resetting Fast Baud Rate to Previous Baud Rate (15)
EN LOW to EN HIGH
t2
—
5.0
s
Notes
9.
10.
11.
See Figures 11 and 12, 11.
12.
See Figure 14a, 11.
13.
14.
This parameter is guaranteed by design; however, it is not production tested.
15.
See Figure 13, 11.
16.
No capacitor is connected to the INH pin. Measurement is done between the EN HIGH-to-LOW transition at 80% of INH voltage.
17.
See Figure 14b, 11.
Table 4. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V
VSUP 18 V, -40C TA 125C, GND = 0 V, unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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| MCZ33661EFR2 | 制造商:Freescale Semiconductor 功能描述:IC LIN INTERFACE 制造商:Freescale Semiconductor 功能描述:IC, LIN INTERFACE |
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