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参数资料
| 型号： | MCZ33780EG |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO16 |
| 封装： | 1.27 MM PITCH, ROHS COMPLIANT, SOIC-16 |
| 文件页数： | 36/37页 |
| 文件大小： | 851K |
| 代理商： | MCZ33780EG |
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Analog Integrated Circuit Device Data
8
Freescale Semiconductor
33780
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
BUS TRANSMITTER
Idle-to-Signal and Signal-to-Idle Slew Rate (12
≤ V
SUP ≤ 25 V)
tSLEW(IDLE)
2.0
4.5
8.0
V/
s
(See Data Valid DSIS to DnD Timing)
tSLEW(SIGNAL)
3.0
4.5
8.0
V/
s
Communication Data Rate Capability (13) (Ensured by Transmitter Data
Valid and Receiver Delay Measurements)
DRATE
–
150
kbps
Signal Bit Time (1 / DRATE)
tBIT
6.67
–
s
INT
Turn ON Delay, DBUS Transaction End to Receive FIFO
INT
Low (11), (15)
tINTON
–
1/3 * tBIT
+0.2
s
INT
Turn ON Delay (C = 100 pF) (12)
CS
to INT Low
tINTON
–
0.2
s
INT
Turn OFF Delay, CS/SCLK Rising Edge to INT High
tINTOFF
–
0.2
s
Spread Spectrum Mode Disabled
Spread Spectrum Mode Enabled
tDBUSSTART1
tDBUSSTART2
1/3 * tBIT
–
2/3 * tBIT
4/3 * tBIT
s
DSIF (CS) = 0.5 * VCC to DnD Fall = 5.5 V
DSIS (MOSI) = 0.5 * VCC to DnD Fall = 0.2 * VDnD
DSIS (MOSI) = 0.5 * VCC to DnD Rise = 0.8 * VDnD
DSIF (CS) = 0.5 * VCC to DnD Rise = 6.5 V
tDVLD1
tDVLD2
tDVLD3
tDVLD4
–
0.25
–
6.0
0.8
6.56
1.3
s
Signal Driver Overcurrent Shutdown Delay
tOC
2.0
–
20
s
Signal Low Time for Logic Zero
33.3% Duty Cycle (16)
t0LO
2/3 * tBIT-0.8 2/3 * tBIT-0.6 2/3 * tBIT-0.4
s
Signal Low Time for Logic One
66.7% Duty Cycle (16)
t1LO
1/3 * tBIT-0.8 1/3 * tBIT-0.6 1/3 * tBIT-0.4
s
Notes
10
C = 7.5 nF from DnH to DnL and 4.7 nF from DnH and DnL to GND, capacitor tolerance = ±10%.
11
In the case where the SPI write to DnL (initiating a DBUS transaction start or causing an interrupt) is the last byte in the burst sequence,
timing is from rising edge of CS. Otherwise, timing is from the first SCLK rising edge of the next SPI burst byte.
12
Delays are measured in test mode to determine the delay for analog signal paths.
13
Not measured in production.
14
V
DnD = VDnD(HIGH) - VDnD(LOW).
15
Internal digital delay only.
16
Guaranteed by design.
Table 4. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V
≤ V
CC ≤ 5.25 V, 9.0 V ≤ VSUP ≤ 25 V, - 40°C ≤ T
A ≤ 85°C unless otherwise
noted. Voltages relative to GND unless otherwise noted. Typical values noted reflect the approximate parameter means at
TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCZ33780EG | 制造商:Freescale Semiconductor 功能描述:DUAL DBUS MASTER INTERFACE 16SOIC |
| MCZ33780EGR2 | 功能描述:多路器开关 IC DBUS MASTER RoHS:否 制造商:Texas Instruments 通道数量:1 开关数量:4 开启电阻（最大值）:7 Ohms 开启时间（最大值）: 关闭时间（最大值）: 传播延迟时间:0.25 ns 工作电源电压:2.3 V to 3.6 V 工作电源电流: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UQFN-16 |
| MCZ33781EK | 功能描述:输入/输出控制器接口集成电路 DBUS2 MASTER STND RoHS:否 制造商:Silicon Labs 产品: 输入/输出端数量: 工作电源电压: 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:QFN-64 封装:Tray |
| MCZ33781EKR2 | 功能描述:输入/输出控制器接口集成电路 DBUS2 MASTER STND RoHS:否 制造商:Silicon Labs 产品: 输入/输出端数量: 工作电源电压: 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:QFN-64 封装:Tray |
| MCZ33784EF | 功能描述:加速计 - 板上安装 DBUS2 SENSOR INTERFACE RoHS:否 制造商:Murata 传感轴:Double 加速:12 g 灵敏度: 封装 / 箱体: 输出类型:Analog 数字输出 - 位数:11 bit 电源电压-最大:5.25 V 电源电压-最小:4.75 V 电源电流:4 mA 最大工作温度:+ 125 C 最小工作温度:- 40 C |
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