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| 型号： | MCZ33797EK |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 2/36页 |
| 文件大小： | 0K |
| 描述： | IC SQUIB DRIVER 4-CH 32-SOIC |
| 标准包装： | 42 |
| 系列： | * |
| 应用： | * |
| 接口： | * |
| 电源电压： | * |
| 封装/外壳： | 32-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 32-SOIC |
| 包装： | 管件 |
| 安装类型： | 表面贴装 |
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Analog Integrated Circuit Device Data
10
Freescale Semiconductor
33797
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
RST INPUT PIN (ACTIVE LOW) (11)
System Reset Threshold
VDDRST
–
4.1
V
Internal Current Pull-down
IRST
-6.0
-10
-15
A
RST Logic Low Level
VRST(LO)
0.0
2.5
0.35 x VDD
V
RST Logic High Level
VRST(HI)
0.65 x VDD
2.5
1.0 x VDD
V
SQUIB DIAGNOSTICS ($D0–$D3 COMMANDS) (12)
Diagnostic Current Through Squib (13)
IDIAG
30
34
40.5
mA
Resistance Threshold 1 (13)
RTH1
1.2
1.4
1.6
Resistance Threshold 2 (13)
RTH2
1.6
1.8
2.1
Resistance Threshold 3 (13)
RTH3
2.1
2.4
2.6
Resistance Threshold 4 (13)
RTH4
2.6
2.9
3.2
Resistance Threshold 5 (13)
RTH5
3.3
3.7
4.4
Resistance Threshold 6 (13)
RTH6
4.6
5.4
6.0
Resistance Threshold 7 (13)
RTH7
5.7
6.5
7.1
Resistance Threshold 8 (13)
RTH8
6.7
7.8
8.5
SQUIB SHORT-TO-BATTERY/GROUND DIAGNOSTICS AND SQUIB HARNESS SHORT-TO-BATTERY/GROUND DIAGNOSTICS WITH
AN OPEN SQUIB ($C1, $C3 COMMANDS)
Voltage Threshold for SQB_LO and SQB_HI Shorted to VPWR
7.0 V
VVDIAG_X 35 V
VTHSB
5.7
6.0
6.4
V
Voltage Threshold for SQB_LO and SQB_HI Shorted to Ground
7.0 V
VVDIAG_X 35 V
VTHSG
1.3
1.4
1.6
V
Current Sink Shorts Measurements I_SQB_LO_XX (14)
1.0 V
SENSE_XX 16 V, Typical = 800 A
ISINKSHRTS
-500
-800
-900
A
Current Source Shorts Measurements I_SQB_HI_XX (14)
1.0 V
SENSE_XX 16 V, 7.0 V VVDIAG_X 35 V
ISOURSHRTS
1.7
3.5
3.7
mA
Voltage Threshold for SQB_LO or SQB_HI Shorted to VPWR with an Open
Squib using $C3 Command
RSQUIB = Open
VTHSB_SO
5.75
–
6.79
V
Notes
11
Reset Bar range of operation: The minimum system reset bar threshold/active will be set to “0” for a value of VDD 4.1 V.
12
By changing the R_DIAG resistor value, the resistance thresholds can be varied in a linear relationship.The R_DIAG resistance can be
changed by ±10% to shift the thresholds by ±10%. Design goal for resistance threshold change is ±15%. R_DIAG threshold limit may
have to be changed to accommodate ±15% change. Example: Shifting the R_DIAG resistance value ±10%, the resistance threshold
will change by ±10%. Refer to Table 5, page 13.
13
RR_DIAG = 10 k ±1.0%
14
XX = 1A, 1B, 2A, or 2B.
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V VDD 5.25 V; 7.0 V VVFIRE_XX 35 V; VVDIAG_X = VVFIRE_XX;
FEN 1 = FEN 2 = VDD; RR_LIMIT_X = 10 k ±1%, RR_DIAG = 10 k ±1%, -40 C TA +85 C, GND = 0, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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