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| 型号： | MCZ33880EGR2 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/25页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH OCTAL SER I/O 28-SOIC |
| 标准包装： | 1,000 |
| 类型： | 高端/低端驱动器 |
| 输入类型： | SPI |
| 输出数： | 8 |
| 导通状态电阻： | 550 毫欧 |
| 电流 - 峰值输出： | 1.4A |
| 电源电压： | 5.5 V ~ 24.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 28-SOIC W |
| 包装： | 带卷 (TR) |
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions 4.75 V ≤ V DD ≤ 5.25 V, 9.0 V ≤ V PWR ≤ 16 V, -40 ° C ≤ T C ≤ 125 ° C unless otherwise
noted. Typical values, where applicable, reflect the parameter’s approximate average value with V PWR = 13 V, T A = 25 ° C.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT TIMING
Output Slew Rate Low-Side Configuration (14)
t R
V/ μ s
R L = 620 Ω
Output Slew Rate Low-Side Configuration (14)
R L = 620 Ω
Output Slew Rate High-Side Configuration (14)
R L = 620 Ω
t F
t R
0.1
0.1
0.1
0.5
0.5
0.3
1.2
1.2
1.2
V/ μ s
V/ μ s
Output Slew Rate High-Side Configuration
t F
V/ μ s
R L = 620 Ω
0.1
0.3
1.2
Output Turn ON Delay Time, High-Side and Low-Side Configuration (15)
t DLY(ON)
1.0
15
50
μ s
Output Turn OFF Delay Time, High-Side and Low-Side Configuration
t DLY(OFF)
1.0
30
100
μ s
Output Fault Delay Time
t FAULT
100
–
300
μ s
DIGITAL INTERFACE TIMING
Recommended Frequency of SPI Operation
Required Low State Duration on V DD for Reset
V DD ≤ 0.2 V
–
t RESET
–
–
4.0
4.0
6.0
10
MHz
μ s
Falling Edge of CS to Rising Edge of SCLK (Required Setup Time)
Falling Edge of SCLK to Rising Edge of CS (Required Setup Time)
DI to Falling Edge of SCLK (Required Setup Time)
Falling Edge of SCLK to DI (Required Hold Time)
t LEAD
t LAG
t DI(su)
t DI(HOLD)
100
50
16
20
–
–
–
–
–
–
–
–
ns
ns
ns
ns
DI, CS, SCLK Signal Rise Time
t R(DI)
–
5.0
–
ns
DI, CS, SCLK Signal Fall Time
t F(DI)
–
5.0
–
ns
Time from Falling Edge of CS to DO Low Impedance
t DO(EN)
–
–
60
ns
Time from Rising Edge of CS to DO High Impedance (20)
Time from Rising Edge of SCLK to DO Data Valid (21)
t DO(DIS)
t VALID
–
–
–
25
60
60
ns
ns
Notes
14.
15.
16.
17.
18.
19.
20.
21.
Output Rise and Fall time respectively measured across a 620 Ω resistive load at 10 to 90 percent and 90 to 10 percent voltage points.
Output turn ON and OFF delay time measured from 50 percent rising edge of CS to 90 and 10 percent of initial voltage.
Duration of fault before fault bit is set. Duration between access times must be greater than 300 μ s to read faults.
This parameter is guaranteed by design but is not production tested.
Rise and Fall time of incoming DI, CS , and SCLK signals suggested for design consideration to prevent the occurrence of double pulsing.
Time required for output status data to be available for use at DO pin.
Time required for output status data to be terminated at DO pin
Time required to obtain valid data out from DO following the rise of SCLK.
33880
Analog Integrated Circuit Device Data
8
Freescale Semiconductor
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相关代理商/技术参数 |
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| MCZ33880EW | 功能描述:电源开关 IC - 配电 CONFIG OCTAL SER SWITCH RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| MCZ33880EWR2 | 功能描述:电源开关 IC - 配电 CONFIG OCTAL SER SWITCH RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| MCZ33883EG | 功能描述:功率驱动器IC FULL BRIDGE GATE DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCZ33883EG | 制造商:Freescale Semiconductor 功能描述:SEMICONDUCTOR |
| MCZ33883EGR2 | 功能描述:功率驱动器IC FULL BRIDGE GATE DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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