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参数资料
| 型号： | MCZ79076EG |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 11/13页 |
| 文件大小： | 0K |
| 描述： | IC IGNITION CTRL ELECTR 16-SOIC |
| 标准包装： | 47 |
| 系列： | * |
| 类型： | * |
| 应用： | * |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC W |
| 包装： | 管件 |
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
79076
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Ref/Dwell Threshold (Max Pump) (14)
(VCC = 16 V, Advance = 3.0 V, EST = Bypass = 0 V, Dwell sinking
10 mA, Dwell Control = open)
Increasing
Decreasing
Hysteresis
VTH+(R/D)MP
VTH-(R/D)MP
VHYS(R/D)MP
VB + 0.175
VB + 0.115
VB + 0.025
VB + 0.474
VB + 0.425
VB + 0.048
VB + 0.80
VB + 0.735
-
V
OUTPUTS
Bias Resistance to Ground
Dwell = VCC = Ref/Dwell = Reference = Dwell Control = open,
Advance = 1.0 V, EST = Bypass = 0 V
R(B)
0.55
0.68
0.9
k
Bias Voltage (Bypass Mode)
Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V
V(B)BP
2.25
2.43
2.6
V
Bias Voltage Regulation (Bypass Mode)
Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V
V(B)BP
-
30
40
mV
Bias Voltage (EST Mode)
VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = 0 V, Bypass =
3.0 V
V(B)EST
1.9
2.04
2.2
V
Dwell Saturation Voltage
VCC = 4.0 V, ID = 40 mA, Ref/Dwell = Advance =3.0 V,
EST = Bypass = 0 V
VCC = 16 V, ID = 160 mA, Ref/Dwell = Advance =3.0 V,
EST = Bypass = 0 V
VCC = 24 V, ID = 240 mA, Ref/Dwell = Advance =1.0 V,
EST = Bypass = 3.0 V
VCC = 36 V, ID = 360 mA, Ref/Dwell = Advance =1.0 V,
EST = Bypass = 3.0 V
V(D)SAT
-
0.05
0.14
0.20
0.29
0.1
0.24
0.35
0.5
V
Dwell Reverse Clamp Voltage (15)
V(D)REV
-0.9
-0.98
-1.2
V
Dwell Leakage Current (16)
VCC = 16 V, Dwell = 5.0 V, Ref/Dwell = Advance = 3.0 V, EST =
Bypass = 0, Bias Voltage = Reference = open
I(D)KG
-
0.044
50
A
Reference Low (17)
IR = sinking 0.3 mA, Ref/Dwell = Advance = 1.0 V, EST = Bypass =
0 V
V(R)LOW
-
0.13
0.22
V
Notes
14.
Ref/Dwell Threshold Voltage (Max Pump) is the positive (or negative) going voltage on Ref/Dwell necessary cause the Dwell voltage to
positive (or negative) going transition 1.5 V respectively. It is expressed as VTH±(RD) = VB + VX where VB is the Bias Voltage and VX is
the additional voltage necessary to attain the threshold. Advance = 3.0 V providing maximum input assist or Max Pump" influence of
Dwell signal; Reference = Dwell Control = open.
15.
All pins open except Pwr Gnd with Dwell sinking 200 mA.
16.
Limit conditions with Dwell output NPN in the OFF condition.
17.
Reference saturation voltage to ground with 0.3mA of current going into the Reference.
Table 2. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V
≤ V
CC ≤ 18 V, - 40°C ≤ T
A ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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