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参数资料
| 型号： | MD1803DFP |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220FP, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 代理商： | MD1803DFP |
MD1803DFP
Electrical characteristics
3/10
2
Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 1500 V
Tc= 125 °C
0.2
2
mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
40
120
mA
V(BR)EBO
Emitter-base breakdown voltage
(IC = 0)
IE = 700 mA
10
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 5 A
IB = 1.25 A
2
V
VBE(sat)
(1)
Base-emitter saturation voltage
IC = 5 A
IB = 1.25 A
1.2
V
hFE
(1)
DC current gain
IC = 1 A
VCE = 5 V
IC = 5 A
VCE = 1 V
IC = 5 A
VCE = 5 V
5.5
18
5
7.5
VF
Diode forward voltage
IF= 5 A
1.6
V
ts
tf
Inductive load
Storage time
Fall time
IC = 4 A__ _ _
fh = 16 KHz
IB(on) = 0.6 A__ VBE(off) = - 2.7V
LBB(off) = 4.5 H
2.5
0.3
3
0.6
s
1.
Pulsed duration = 300 ms, duty cycle
≤1.5%.
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