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参数资料
| 型号： | MD2009DFX |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, TO-3PF, 3 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 205K |
| 代理商： | MD2009DFX |
Electrical ratings
MD2009DFX
2/10
Doc ID 12125 Rev 5
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VBE = 0)
1500
V
VCEO
Collector-emitter voltage (IB = 0)
700
V
VEBO
Base-emitter voltage (IC = 0)
7
V
IC
Collector current
10
A
ICM
Collector peak current (tP < 5ms)
16
A
IB
Base current
6
A
PTOT
Total dissipation at Tc = 25°C
58
W
VISO
Isolation withstand voltage (RMS) from all three
leads to external heatsink
2500
V
Tstg
Storage temperature
-65 to 150
150
°C
TJ
Max. operating junction temperature
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
2.15
°C/W
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