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参数资料
| 型号： | MDD142-18N1 |
| 厂商： | IXYS CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | HIgh Power Diode Modules |
| 中文描述： | 165 A, 1800 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/3页 |
| 文件大小： | 131K |
| 代理商： | MDD142-18N1 |
2000 IXYS All rights reserved
1 - 3
I
FRMS
= 2x 300 A
I
FAVM
= 2x 165 A
V
RRM
= 800-1800 V
Symbol
I
R
V
F
V
T0
r
T
Q
S
I
RM
R
thJC
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 300 A; T
VJ
= 25 C
For power-loss calculations only
T
VJ
= T
VJM
T
VJ
= 125 C; I
F
= 300 A, -di/dt = 50 A/ s
Characteristic Values
20
1.3
0.8
1.3
550
235
0.21
0.105
0.31
0.155
12.7
9.6
mA
V
V
m
C
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
per diode; DC current
per module
per diode; DC current
per module
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
other values
see Fig. 6/7
R
thJK
d
S
d
A
a
50
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Dimensions in mm (1 mm = 0.0394")
V
RSM
V
V
RRM
V
Type
900
1300
1500
1700
1900
800
1200
1400
1600
1800
MDD 142-08N1
MDD 142-12N1
MDD 142-14N1
MDD 142-16N1
MDD 142-18N1
Symbol
I
FRMS
I
FAVM
I
FSM
Test Conditions
T
VJ
= T
T
C
= 100 C; 180 sine
T
VJ
= 45 C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Maximum Ratings
300
165
4700
5000
4100
4300
110 000
104 000
84 000
77 000
-40...+150
150
-40...+125
3000
3600
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
120
A
A
A
A
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
i
2
dt
A
2
s
A
2
s
A
2
s
A
2
s
C
C
C
V~
V~
T
VJ
T
VJM
T
stg
V
ISOL
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
t = 1 min
t = 1 s
M
d
Weight
g
Features
G
International standard package
G
Direct copper bonded Al
2
O
3
-ceramic
base plate
G
Planar passivated chips
G
Isolation voltage 3600 V~
G
UL registered, E 72873
Applications
G
Supplies for DC power equipment
G
DC supply for PWM inverter
G
Field supply for DC motors
G
Battery DC power supplies
Advantages
G
Space and weight savings
G
Simple mounting
G
Improved temperature and power
cycling
G
Reduced protection circuits
MDD 142
High Power
Diode Modules
3
1
2
3
1
2
相关PDF资料 |
PDF描述 |
|---|---|
| MDD172 | High Power Diode Modules |
| MDD172-08N1 | High Power Diode Modules |
| MDD172-12N1 | High Power Diode Modules |
| MDD172-14N1 | High Power Diode Modules |
| MDD172-16N1 | High Power Diode Modules |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MDD172 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Power Diode Modules |
| MDD172-08N1 | 功能描述:分立半导体模块 172 Amps 800V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MDD172-12N1 | 功能描述:分立半导体模块 172 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MDD172-14N1 | 功能描述:分立半导体模块 172 Amps 1400V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MDD172-16N1 | 功能描述:分立半导体模块 172 Amps 1600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
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