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参数资料
| 型号： | MDD250-16N1 |
| 厂商： | IXYS |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | MOD DIODE DUAL 1600V Y2-DCB |
| 标准包装： | 2 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.3V @ 600A |
| 电流 - 在 Vr 时反向漏电： | 40mA @ 1600V |
| 电流 - 平均整流 (Io)（每个二极管）： | 290A |
| 电压 - (Vr)（最大）： | 1600V（1.6kV） |
| 二极管类型： | 标准 |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 二极管配置： | 1 对串联 |
| 安装类型： | 底座安装 |
| 封装/外壳： | Y2-DCB |
| 供应商设备封装： | Y2-DCB |
| 包装： | 散装 |
MDD 250
High Power
Diode Modules
I FRMS = 2x 450 A
I FAVM = 2x 290 A
V RRM = 800-1600 V
3
V RSM
V RRM
Type
3
1
2
2
V
900
1300
1500
1700
V
800
1200
1400
1600
MDD 250-08N1
MDD 250-12N1
MDD 250-14N1
MDD 250-16N1
1
V R = 0
T VJ = T VJM
V R = 0
V R = 0
T VJ = T VJM
V R = 0
Direct copper bonded Al 2 O 3 -ceramic
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Space and weight savings
Simple mounting
Improved temperature and power
Symbol
I FRMS
I FAVM
I FSM
ò i 2 dt
T VJ
T VJM
T stg
Test Conditions
T VJ = T VJM
T C = 100 ° C; 180 ° sine
T VJ = 45 ° C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T VJ = 45 ° C t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
450 A
290 A
11 000 A
11 700 A
9000 A
9600 A
605 000 A 2 s
560 000 A 2 s
405 000 A 2 s
380 000 A 2 s
-40...+150 ° C
150 ° C
-40...+125 ° C
Features
q
base plate
q
q
q
Applications
q
q
q
q
Advantages
q
q
q
V ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
cycling
I ISOL ￡ 1 mA
t=1s
3600
V~
q
Reduced protection circuits
M d
Mounting torque (M5)
Terminal connection torque (M8)
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
Weight
Symbol
I RRM
Typical including screws
Test Conditions
T VJ = T VJM ; V R = V RRM
320 g
Characteristic Values
40 mA
Dimensions in mm (1 mm = 0.0394")
V F
V T0
r T
R thJC
I F = 600 A; T VJ = 25 ° C
For power-loss calculations only
T VJ = T VJM
per diode; DC current
1.3
0.75
0.75
0.129
V
V
m W
K/W
per module
other values
0.065
K/W
R thJK
per diode; DC current
per module
see Fig. 6/7
0.169
0.0845
K/W
K/W
Q S
T VJ = 125 ° C, I F = 400 A; -di/dt = 50 A/ m s
760
m C
I RM
d S
d A
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
275
12.7
9.6
50
A
mm
mm
m/s 2
20
12
14
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
? 2000 IXYS All rights reserved
Threaded spacer for higher Anode/Cathode
construction: Type ZY 250 , material brass
1-3
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