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参数资料
| 型号： | MDD310-22N1 |
| 厂商： | IXYS |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | MOD DIODE DUAL 2200V Y2-DCB |
| 标准包装： | 2 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.2V @ 600A |
| 电流 - 在 Vr 时反向漏电： | 40mA @ 2200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 305A |
| 电压 - (Vr)（最大）： | 2200V（2.2kV） |
| 二极管类型： | 标准 |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 二极管配置： | 1 对串联 |
| 安装类型： | 底座安装 |
| 封装/外壳： | Y2-DCB |
| 供应商设备封装： | Y2-DCB |
| 包装： | 散装 |
MDD 310
High Power
Diode Modules
I FRMS = 2x 480 A
I FAVM = 2x 305 A
V RRM = 800-2200 V
3
V RSM
V RRM
Type
3
1
2
2
V
900
1300
1500
1700
2100
2300
V
800
1200
1400
1600
2000
2200
MDD 310-08N1
MDD 310-12N1
MDD 310-14N1
MDD 310-16N1
MDD 310-20N1
MDD 310-22N1
1
Symbol
Test Conditions
Maximum Ratings
Features
V R = 0
T VJ = T VJM
V R = 0
V R = 0
T VJ = T VJM
V R = 0
Direct copper bonded Al 2 O 3 -ceramic
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Space and weight savings
Simple mounting
Improved temperature and power
I FRMS
I FAVM
I FSM
ò i 2 dt
T VJ
T VJM
T stg
T VJ = T VJM
T C = 100 ° C; 180 ° sine
T VJ = 45 ° C; t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
T VJ = 45 ° C t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
480 A
305 A
11 500 A
12 200 A
9 600 A
10 200 A
662 000 A 2 s
620 000 A 2 s
460 000 A 2 s
430 000 A 2 s
-40...+150 ° C
150 ° C
-40...+125 ° C
q
base plate
q
q
q
Applications
q
q
q
q
Advantages
q
q
q
V ISOL
50/60 Hz, RMS
t = 1 min
3000
V~
cycling
I ISOL ￡ 1 mA
t=1s
3600
V~
q
Reduced protection circuits
M d
Mounting torque (M5)
Terminal connection torque (M8)
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
Weight
Symbol
I RRM
Typical including screws
Test Conditions
T VJ = T VJM ; V R = V RRM
320 g
Characteristic Values
40 mA
Dimensions in mm (1 mm = 0.0394")
V F
V T0
r T
R thJC
I F = 600 A; T VJ = 25 ° C
For power-loss calculations only
T VJ = T VJM
per diode; DC current
1.2
0.75
0.63
0.129
V
V
m W
K/W
per module
other values
0.065
K/W
R thJK
per diode; DC current
per module
see Fig. 6/7
0.169
0.0845
K/W
K/W
Q S
T VJ = 125 ° C, I F = 400 A; -di/dt = 50 A/ m s
760
m C
I RM
d S
d A
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
275
12.7
9.6
50
A
mm
mm
m/s 2
20
12
14
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
? 2000 IXYS All rights reserved
Threaded spacer for higher Anode/Cathode
construction: Type ZY 250 , material brass
1-3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MDD310-22V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Diode/Diode Module |
| MDD312 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Power Diode Modules |
| MDD312-12N1 | 功能描述:分立半导体模块 312 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MDD312-14N1 | 功能描述:分立半导体模块 312 Amps 1400V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MDD312-16N1 | 功能描述:分立半导体模块 312 Amps 1600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
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