参数资料
型号: MDD72-08N1B
厂商: IXYS CORP
元件分类: 参考电压二极管
英文描述: Diode Modules
中文描述: 99 A, 800 V, SILICON, RECTIFIER DIODE, TO-240AA
封装: TO-240AA, 3 PIN
文件页数: 1/3页
文件大小: 126K
代理商: MDD72-08N1B
2000 IXYS All rights reserved
1 - 3
I
FRMS
= 2x 180 A
I
FAVM
= 2x 113 A
V
RRM
= 800-1800 V
Symbol
I
R
V
F
V
T0
r
T
Q
S
I
RM
R
thJC
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 300 A; T
VJ
= 25 C
For power-loss calculations only
T
VJ
= T
VJM
T
VJ
= 125 C; I
F
= 50 A, -di/dt = 3 A/ s
Characteristic Values
15
1.6
0.8
2.3
170
45
0.35
0.175
0.55
0.275
12.7
9.6
mA
V
V
m
C
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
per diode; DC current
per module
per diode; DC current
per module
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
other values
see Fig. 6/7
R
thJK
d
S
d
A
a
50
V
RSM
V
V
RRM
V
Type
900
1300
1500
1700
1900
800
1200
1400
1600
1800
MDD 72-08N1 B
MDD 72-12N1 B
MDD 72-14N1 B
MDD 72-16N1 B
MDD 72-18N1 B
MDA 72-08N1 B
---
MDA 72-14N1 B
MDA 72-16N1 B
---
Symbol
I
FRMS
I
FAVM
Test Conditions
T
VJ
= T
T
C
= 92 C; 180 sine
T
C
= 100 C; 180 sine
T
VJ
= 45 C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Maximum Ratings
180
113
99
1700
1950
1540
1800
14 450
15 700
11 850
13 400
-40...+150
150
-40...+125
3000
3600
2.5-4/22-35 Nm/lb.in.
2.5-4/22-35 Nm/lb.in.
90
A
A
A
A
A
A
A
I
FSM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
i
2
dt
A
2
s
A
2
s
A
2
s
A
2
s
C
C
C
V~
V~
T
VJ
T
VJM
T
stg
V
ISOL
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
t = 1 min
t = 1 s
M
d
Weight
g
Features
G
International standard package
JEDEC TO-240 AA
G
Direct copper bonded Al
2
O
3
-ceramic
base plate
G
Planar passivated chips
G
Isolation voltage 3600 V~
G
UL registered, E 72873
Applications
G
Supplies for DC power equipment
G
DC supply for PWM inverter
G
Field supply for DC motors
G
Battery DC power supplies
Advantages
G
Space and weight savings
G
Simple mounting
G
Improved temperature and power
cycling
G
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
MDD 72
MDA 72
3
1
2
TO-240 AA
1
2
3
Diode Modules
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
3
1
2
MDA
MDD
相关PDF资料
PDF描述
MDD72-12N1B Diode Modules
MDD72-14N1B Diode Modules
MDD72-16N1B Diode Modules
MDD72-18N1B Diode Modules
MDC5100 ANTENNA SWITCH CONTROLLER
相关代理商/技术参数
参数描述
MDD72-12N1B 功能描述:分立半导体模块 72 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MDD72-14N1B 功能描述:分立半导体模块 72 Amps 1400V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MDD72-16N1B 功能描述:分立半导体模块 72 Amps 1600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MDD72-18N1B 功能描述:分立半导体模块 72 Amps 1800V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MDD810-16N2 功能描述:SCR模块 Dual Diode Modules RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流(在 VDRM IDRM 下):20 mA 开启状态电压:1.43 V 保持电流(Ih 最大值): 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK