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参数资料
| 型号： | ME4565 |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | JFETs |
| 英文描述： | 4.9 A, 40 V, 0.04 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOP-8 |
| 文件页数： | 1/7页 |
| 文件大小： | 1878K |
| 代理商： | ME4565 |
N- and P-Channel 40-V Power MOSFET
ME4565
01
Nov, 2007-Ver4.0
Rev 0. Nov. 2007
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
VDSS
40
-40
Gate-Source Voltage
VGSS
±16
V
TA=25℃
6.2
4.9
-5.3
-4.2
Continuous Drain
Current(Tj=150℃)
TA=70℃
ID
4.8
3.8
-4.1
-3.2
Pulsed Drain Current
IDM
25
Avalanche Current
IAS
13
16
A
Single Pulse Avalanche Energy
L=0.1mH
EAS
8.5
13
mJ
TA=25℃
2.5
1.56
2.45
1.52
Maximum Power Dissipation
TA=70℃
PD
1.5
0.94
1.47
0.91
W
Operating Junction Temperature
TJ
-55 to 150
℃
Thermal Resistance-Junction to Ambient *
RθJA
50
80
51
82
℃/W
Thermal Resistance-Junction to Case*
RθJC
49
50
℃/W
GENERAL DESCRIPTION
The LT4565 is the N- and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
FEATURES
●
RDS(ON)≦40m@VGS=10V (N-Ch)
●
RDS(ON)≦45m@VGS=4.5V (N-Ch)
●
RDS(ON)≦54m@VGS=-10V (P-Ch)
●
RDS(ON)≦60m@VGS=-4.5V(P-Ch)
●
Super high density cell design for extremely low RDS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management
●
DC/DC Converter
●
LCD TV & Monitor Display inverter
●
CCFL inverter
PIN
CONFIGURATION
Absolute Maximum Ratings
(TA=25℃ Unless Otherwise Noted)
(SOP-8)
Top View
*The device mounted on 1in
2 FR4 board with 2 oz copper
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