参数资料
型号: MG100J2YS50
元件分类: IGBT 晶体管
英文描述: 100 A, 600 V, N-CHANNEL IGBT
封装: 2-94D1A, 7 PIN
文件页数: 1/5页
文件大小: 226K
代理商: MG100J2YS50
MG100J2YS50
2001-02-22 1/5
TOSHIBA GTR Module Silicon N Channel IGBT
MG100J2YS50
High Power Switching Applications
Motor Control Applications
l The electrodes are isolated from case.
l High input impedance.
l Includes a complete half bridge in one package.
l Enhancement-mode.
l High speed : tf = 0.30s (Max) (IC = 100A)
trr = 0.15s (Max) (IF = 100A)
l Low saturation voltage
: VCE (sat)=2.70V (Max) (IC=100A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
100
Collector current
1ms
ICP
200
A
DC
IF
100
Forward current
1ms
IFM
200
A
Collector power dissipation (Tc=25°C)
PC
450
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 min.)
V
Screw torque (Terminal / mounting)
3 / 3
Nm
JEDEC
EIAJ
TOSHIBA
2-94D1A
Weight: 202g (Typ.)
Unit: mm
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
000707EAA2
相关PDF资料
PDF描述
MG100J6ES50 100 A, 600 V, N-CHANNEL IGBT
MG100J7KS50 100 A, 600 V, N-CHANNEL IGBT
MG100Q1ZS40 100 A, 1200 V, N-CHANNEL IGBT
MG100Q2YS42 100 A, 1200 V, N-CHANNEL IGBT
MG100Q2YS50A 150 A, 1200 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
MG100J6ES1 制造商:n/a 功能描述:IGBT Module 制造商:Toshiba America Electronic Components 功能描述:
MG100J6ES40 制造商:n/a 功能描述:IGBT Module
MG100J6ES50 制造商:n/a 功能描述:IGBT Module
MG100J7KS50 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG100M2YK1 制造商:n/a 功能描述:Darlington Module