参数资料
型号: MG1010-11
厂商: MICROSEMI CORP-LOWELL
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 12.4 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
封装: CERAMIC, ROHS COMPLIANT, M11
文件页数: 4/4页
文件大小: 204K
代理商: MG1010-11
MG1001 – MG1061
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 4
TM
GUNN Diodes
Cathode Heat Sink
Copyright
2008
Rev: 2009-01-19
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
Typical Characteristics
1.0
-50°C
90°C
I Bi
as
I Threshold
Ratio
Powe
r
Output
(m
W)
0.8
0.6
0.4
0.2
300
250
200
150
100
0
1
2
3
0
2
4
6
8
10
12
VBias
VThreshold
Ratio
IBias Ratio vs. VBias Ratio
Bias Voltage (V)
Power Output vs. Bias Voltage
IMPORTANT:
For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
These products are supplied with a RoHS
complaint Gold finish
.
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