型号: | MG1012-15 |
厂商: | MICROSEMI CORP-LOWELL |
元件分类: | 参考电压二极管 |
英文描述: | 12.4 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
封装: | CERAMIC, ROHS COMPLIANT, M15 |
文件页数: | 1/4页 |
文件大小: | 204K |
代理商: | MG1012-15 |
相关PDF资料 |
PDF描述 |
---|---|
MIV41012-29 | mm WAVE BAND, 0.4 pF, 75 V, SILICON, VARIABLE CAPACITANCE DIODE |
MPG06J-HE3/73 | 1 A, 600 V, SILICON, SIGNAL DIODE |
MA4E1340A1-287T | SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE |
MQ15KP100TR | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR |
MQ15KP110AE3 | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR |
相关代理商/技术参数 |
参数描述 |
---|---|
MG1013-16 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
MG1014-16 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
MG1014-C0067 | 制造商:Power-One 功能描述: |
MG1015-16 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
MG1016-17 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |