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参数资料
| 型号： | MG1020-16 |
| 厂商： | MICROSEMI CORP-LOWELL |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 26.5 GHz - 40 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
| 封装： | CERAMIC, ROHS COMPLIANT, M16 |
| 文件页数： | 3/4页 |
| 文件大小： | 204K |
| 代理商： | MG1020-16 |
MG1001 – MG1061
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 3
TM
GUNN Diodes
Cathode Heat Sink
Copyright
2008
Rev: 2009-01-19
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
Ka Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
Max.
(mA)
Package
Outline3
MG1017-16
26.5–40.0
50
4.5
300
700
M16
MG1018-16
26.5–40.0
100
4.5
600
1100
M16
MG1019-16
26.5–40.0
200
5.0
800
1400
M16
MG1020-16
26.5–40.0
250
5.5
800
1600
M16
MG1039-16
26.5–35.0
300
5.5
1000
1700
M16
MG1040-16
26.5–35.0
350
5.5
1000
1800
M16
U Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Part
Number
Operating
Frequen y1
c
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
Max.
(mA)
Package
Outline3
MG1021-16
40.0–60.0
50
4
400
800
M16
MG1022-16
40.0–60.0
100
4
700
1200
M16
MG1023-16
40.0–50.0
150
4
800
1600
M16
V and W Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Part
Number
Operating
Frequen y1
c
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
Max.
(mA)
Package
Outline3
MG1036-16
60.5–85.0
10
4.5
400
900
M16
MG1037-16
60.5–85.0
50
5
500
1100
M16
MG1024-16
85–95
10
4.5
450
1100
M16
MG1025-16
85–95
20
4.5
500
1000
M16
MG1038-16
85–95
50
5
450
1200
M16
High Power Pulsed Gunn Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Typ.
Operating Current
(Amps.)
Package
Outline3
MG1034-15
9.3
5
35
8
M15
Stacked Pulsed Gunn Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequen y1
c
(GHz)
Min.
Power2
(Watts)
Typ.
Operating
Voltage (V)
Typ.
Operating Current
(Amps)
Number
of Stacks
Package
Outline3
MG1060-15
9.3
10
70
6
2
M15
1
Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown.
Additional frequencies are available; Please contact the factory.
2
Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 S, duty factor = 1% typ.
3
Polarity: anode is the cap and cathode is the heatsink.
相关PDF资料 |
PDF描述 |
|---|---|
| MG1037-16 | 60.5 GHz - 85 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
| MG1009-11 | 12.4 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
| MG1022-16 | 40 GHz - 60 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
| MG1060-15 | 9.3 GHz, GALLIUM ARSENIDE, PULSED GUNN DIODE |
| MG1040-16 | 26.5 GHz - 35 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MG1021-16 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
| MG1022-16 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
| MG1023-16 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
| MG1024-16 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
| MG1025-16 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
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