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参数资料
| 型号： | MG150Q2YS40 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 1200 V, N-CHANNEL IGBT |
| 封装： | 2-109C1A, 7 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 393K |
| 代理商： | MG150Q2YS40 |
MG150Q2YS40
2001-08-16
1
TOSHIBA GTR Module Silicon N Channel IGBT
MG150Q2YS40
High Power Switching applications
Motor Control Applications
High input impedance
High speed : tf = 0.5s (max)
trr = 0.5s (max)
Low saturation voltage
: VCE (sat) = 4.0V (max)
Enhancement-mode
Includes a complate half bridge in one package.
The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1200
V
Gate-emitter voltage
VGES
±20
V
DC
IC
150
Collector current
1ms
ICP
300
A
DC
IF
150
Forward current
1ms
IFM
300
A
Collector power dissipation (Tc = 25°C)
PC
1100
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 min.)
V
Screw torque (Terminal / mounting)
―
3 / 3
Nm
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-109C1A
Weight: 430g (typ.)
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