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参数资料
| 型号： | MG150Q2YS65H |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 1200 V, N-CHANNEL IGBT |
| 封装： | 2-95A4A, 7 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 代理商： | MG150Q2YS65H |
MG150Q2YS65H
2002-10-04
1
TOSHIBA IGBT Module Silicon N Channel IGBT
MG150Q2YS65H
High Power & High Speed Switching
Applications
High input impedance
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1200
V
Gate-emitter voltage
VGES
±20
V
DC
IC
150
Collector current
1ms
ICP
300
A
DC
IF
150
Forward current
1ms
IFM
300
A
Collector power dissipation
(Tc = 25°C)
PC
890
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 to 125
°C
Isolation voltage
VIsol
2500
(AC 1 minute)
V
Terminal
3
Screw torque
Mounting
3
Nm
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-95A4A
Weight: 255 g (typ.)
G1 E1/C2
E2
G2
E1
E2
C1
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