参数资料
型号: MG200J6ES60
元件分类: IGBT 晶体管
英文描述: 200 A, 600 V, N-CHANNEL IGBT
封装: 2-123B1A, 17 PIN
文件页数: 7/7页
文件大小: 0K
代理商: MG200J6ES60
MG200J6ES60
2004-02-17
7
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
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030619EAA
RESTRICTIONS ON PRODUCT USE
相关PDF资料
PDF描述
MG200Q1JS40 200 A, 1200 V, N-CHANNEL IGBT
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相关代理商/技术参数
参数描述
MG200J6ES61 功能描述:IGBT MOD CMPCT 600V 200A RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
MG200M1UK1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MODULES
MG200Q1JS40 制造商:Toshiba America Electronic Components 功能描述:
MG200Q1UK1 制造商:n/a 功能描述:Darlington Module
MG200Q1US1 制造商:Toshiba America Electronic Components 功能描述: