参数资料
型号: MG200Q2YS60A
厂商: Powerex Inc
文件页数: 3/6页
文件大小: 0K
描述: IGBT MOD CMPCT DUAL 1200V 200A
标准包装: 1
系列: IGBTMOD™
配置: 半桥
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.8V @ 15V,200A
电流 - 集电极 (Ic)(最大): 200A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 15nF @ 10V
功率 - 最大: 2000W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
配用: BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT
BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT
BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
MG200Q2YS60A
DUAL IGBTMOD?
COMPACT IGBT SERIES MODULE
200 AMPERES/1200 VOLTS
ELECTRICAL AND MECHANICAL CHARACTERISTICS, T j = 25°C unless otherwise speci?ed
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
CONTROL SECTOR
FAULT OUTPUT CURRENT
OVER-TEMPERATURE
FAULT OUTPUT DELAY TIME
O C
O T
T D(FO)
V GE = 15V
V CC = 600V, V GE = ±15V
240
100
125
8
A
°C
μS
THERMAL CHARACTERISTICS
Characteristic
JUNCTION TO CASE THERMAL RESISTANCE
CONTACT THERMAL RESISTANCE
Symbol
R TH(J-C)Q
R TH(J-C)D
R TH(C-F)
Condition
IGBT (PER 1/2 MODULE)
FWDI (PER 1/2 MODULE)
Min.
Typ.
0.013
Max.
0.062
0.136
Units
°C/WATT
°C/WATT
°C/WATT
RECOMMENDED CONDITIONS FOR USE
Characteristic
SUPPLY VOLTAGE
GATE VOLTAGE
GATE RESISTANCE
SWITCHING FREQUENCY
Symbol
V CC
V GE
R G
F C
Condition
APPLIED ACROSS C1-E2 TERMINALS
Value
≤ 750
14.8 ^ 17
≥ 10
0 ^ 20
Units
VOLTS
VOLTS
Ω
KHZ
400
OUTPUT CHARACTERISTICS
(TYPICAL)
400
OUTPUT CHARACTERISTICS
(TYPICAL)
400
FREE-WHEEL DIODE CHARACTERISTICS
(TYPICAL)
300
T J = 25°C
V GE = 20V
12V
15V
300
T J = 125°C
V GE = 20V
15V
12V
10V
300
V GE = 0V
T J = 25°C
T J = 125°C
TJ = -40°C
200
10V
200
200
9V
100
9V
100
8V
100
0
0
1
2
3
4
8V
5
0
0
1
2
3
4
5
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, V CE(SAT) , (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
12
T J = 25°C
10
I C = 400A
8
I C = 200A
6
COLLECTOR-EMITTER VOLTAGE, V CE(SAT) , (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
12
T J = 125°C
10
I C = 400A
8
I C = 200A
6
FORWARD VOLTAGE, V F , (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
12
T J = -40°C
10
I C = 400A
8
I C = 200A
6
4
I C = 100A
4
I C = 100A
4
I C = 100A
2
2
2
0
0
5
10
15
20
0
0
5
10
15
20
0
0
5
10
15
20
5/05
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
3
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