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参数资料
| 型号： | MG300J1US51 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 300 A, 600 V, N-CHANNEL IGBT |
| 封装： | 2-109A4A, 4 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 454K |
| 代理商： | MG300J1US51 |
MG300J1US51
2001-02-22 1/5
TOSHIBA GTR Module Silicon N Channel IGBT
MG300J1US51
High Power Switching Applications
Motor Control Applications
The electrodes are isolated from case.
High input impedance
Includes a complete half bridge in one package.
Enhancement-mode
High speed : tf = 0.30s (Max.) (IC = 300A)
trr = 0.15s (Max.) (IF = 300A)
Low saturation voltage
: VCE (sat) = 2.70V (Max.) (IC = 300A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
300
Collector current
1ms
ICP
600
A
DC
IF
300
Forward current
1ms
IFM
600
A
Collector power dissipation (Tc = 25°C)
PC
1300
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 minute)
V
Screw torque (Terminal / M4 / M6 /
mounting)
―
2 / 3 / 3
Nm
JEDEC
―
EIAJ
―
TOSHIBA
2-109A4A
Weight: 465g (Typ.)
Unit: mm
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
000707EAA2
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