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参数资料
| 型号： | MG400J1US51 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 400 A, 600 V, N-CHANNEL IGBT |
| 封装： | 2-109A4A, 4 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 464K |
| 代理商： | MG400J1US51 |
MG400J1US51
2001-02-22 1/5
TOSHIBA GTR Module Silicon N Channel IGBT
MG400J1US51
High Power Switching Applications
Motor Control Applications
The electrodes are isolated from case.
High input impedance
Includes a complete half bridge in one package.
Enhancement-mode
High speed : tf = 0.30s (Max.) (IC = 400A)
trr = 0.15s (Max.) (IF = 400A)
Low saturation voltage
: VCE (sat) = 2.70V (Max.) (IC=400A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
400
Collector current
1ms
ICP
800
A
DC
IF
400
Forward current
1ms
IFM
800
A
Collector power dissipation (Tc = 25°C)
PC
1500
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 min.)
V
Screw torque (Terminal / M4 / M6 / mounting)
―
2 / 3 / 3
Nm
JEDEC
―
EIAJ
―
TOSHIBA
2-109A4A
Weight: 465g (Typ.)
Unit: mm
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
000707EAA2
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| MG400J2YS45 | 400 A, 600 V, N-CHANNEL IGBT |
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| MG40S2YK1 | 40 A, 1000 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MG400J2YS40 | 400 A, 600 V, N-CHANNEL IGBT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MG400J2YS50 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG400J2YS60A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA IGBT Module Silicon N Channel IGBT |
| MG400J2YS61A | 功能描述:IGBT MOD CMPCT DUAL 600V 400A RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| MG400Q1US1 | 制造商:n/a 功能描述:IGBT Module |
| MG400Q1US11 | 制造商:n/a 功能描述:IGBT Module |
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