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参数资料
| 型号： | MG50Q2YS50 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 78 A, 1200 V, N-CHANNEL IGBT |
| 封装： | 2-94D4A, 7 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 252K |
| 代理商： | MG50Q2YS50 |
MG50Q2YS50
2001-04-20
1
TOSHIBA GTR Module Silicon N Channel IGBT
MG50Q2YS50
High Power Switching Applications
Motor Control Applications
l High input impedance
l High speed : tf = 0.3s (Max)
@Inductive load
l Low saturation voltage
: VCE (sat) = 3.6V (Max)
l Enhancement-mode
l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1200
V
Gate-emitter voltage
VGES
±20
V
DC
IC
(25°C / 80°C)
78 / 50
Collector current
1ms
ICP
(25°C / 80°C)
156 / 100
A
DC
IF
50
Forward current
1ms
IFM
100
A
Collector power dissipation
(Tc = 25°C)
PC
400
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 minute)
V
Screw torque (Terminal / mounting)
―
3 / 3
Nm
JEDEC
―
EIAJ
―
TOSHIBA
2-94D4A
Weight: 202g
Unit: mm
相关PDF资料 |
PDF描述 |
|---|---|
| MG50Q2YS50 | 78 A, 1200 V, N-CHANNEL IGBT |
| MG50Q6ES50A | 50 A, 1200 V, N-CHANNEL IGBT |
| MG50Q6ES50A | 72 A, 1200 V, N-CHANNEL IGBT |
| MG50Q6ES50 | 72 A, 1200 V, N-CHANNEL IGBT |
| MG50Q6ES51A | IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MG50Q2YS50A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG50Q6ES40 | 制造商:n/a 功能描述:IGBT Module |
| MG50Q6ES50 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG50Q6ES50A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG50Q6ES51 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
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