参数资料
型号: MG600Q2YS60A
厂商: Powerex Inc
文件页数: 2/6页
文件大小: 0K
描述: IGBT MOD CMPCT 1200V 600A
标准包装: 1
系列: IGBTMOD™
配置: 半桥
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 3.1V @ 15V,600A
电流 - 集电极 (Ic)(最大): 600A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 41nF @ 10V
功率 - 最大: 4300W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
配用: BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT
BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT
BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
MG600Q2YS60A
DUAL IGBTMOD?
COMPACT IGBT SERIES MODULE
600 AMPERES/1200 VOLTS
ABSOLUTE MAXIMUM RATINGS, T j = 25°C unless otherwise speci?ed
Characteristics
COLLECTOR-EMITTER VOLTAGE
GATE-EMITTER VOLTAGE
COLLECTOR CURRENT (DC)
FORWARD CURRENT (DC)
COLLECTOR DISSIPATION (T C = 25°C)
POWER DEVICE JUNCTION TEMPERATURE
STORAGE TEMPERATURE
MOUNTING TORQUE, M5 MOUNTING SCREWS
MOUNTING TORQUE, M8 MAIN TERMINAL SCREWS
MODULE WEIGHT (TYPICAL)
ISOLATION VOLTAGE, AC 1 MINUTE, 60HZ SINUSOIDAL
Symbol
V CES
V GES
I C
I F
P C
T J
T STG
V ISO
MG600Q2YS60A
1200
±20
600
600
4300
-20 TO 150
-40 TO 125
27
88
680
2500
Units
VOLTS
VOLTS
AMPERES
AMPERES
WATTS
°C
°C
IN-LB
IN-LB
GRAMS
VOLTS
ELECTRICAL AND MECHANICAL CHARACTERISTICS, T j = 25°C unless otherwise speci?ed
Characteristics
GATE LEAKAGE CURRENT
COLLECTOR CUTOFF CURRENT
GATE-EMITTER CUTOFF VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
INPUT CAPACITANCE
GATE-EMITTER VOLTAGE
GATE RESISTANCE
INDUCTIVE LOAD
SWITCHING
TIMES
FORWARD VOLTAGE
REVERSE RECOVERY TIME
JUNCTION TO CASE THERMAL RESISTANCE
RTC OPERATING CURRENT
Symbol
I GES
I CES
V GE(OFF)
V CE(SAT)
C IES
V GE
R G
T D(ON)
T R
T ON
T D(OFF)
T F
T OFF
V F
T RR
R TH(J-C)Q
R TH(J-C)D
I RTC
Test Conditions
V GE = ±20V, V CE = 0V
V CE = 1200V, V GE = 0V
I C = 600MA,V CE = 5V
V GE = 15V, I C = 600A, T J = 25°C
V GE = 15V, I C = 600A, T J = 125°C
V CE = 10V, V GE = 0V, F = 1MHZ
V CC = 600V, I C = 600A,
V GE = ±15V, R G = 7.5 Ω
I F = 600A, V GE = 0V, T J = 25°C
I F = 600A, V GE = 0V, T J = 125°C
I F = 600A, V GE = -15V, DI/DT = 2000A/μS
IGBT (PER 1/2 MODULE)
FWDI (PER 1/2 MODULE)
T J = 25°C
Min.
6.0
13.0
7.5
1200
Typ.
6.7
2.7
3.2
41000
15.0
0.3
0.2
0.5
1.3
0.1
1.4
2.2
2.0
0.3
Max.
±10
1.0
8.0
3.1
3.5
17.0
15.0
0.3
3.2
0.5
0.029
0.056
Units
μA
MA
VOLTS
VOLTS
VOLTS
PF
VOLTS
Ω
μS
μS
μS
μS
μS
μS
VOLTS
VOLTS
μS
°C/WATT
°C/WATT
AMPERES
2
7/05
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