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参数资料
| 型号： | MG600Q2YS60A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-11 |
| 文件页数： | 7/9页 |
| 文件大小： | 136K |
| 代理商： | MG600Q2YS60A |
MG600Q2YS60A
2004-10-01
7/9
Rth(j-c) – tw
Pulse width
tw (s)
T
ra
n
s
ie
n
t
th
e
rm
a
l
re
s
is
ta
n
c
e
R
th
(j
-c
)
(°
C
/
W
)
1
0.0005
0.001
0.01
0.1
10
0.01
1
0.1
0.001
Tc = 25°C
Diode stage
Transistor stage
trr, Irr – IF
P
e
a
k
re
v
e
rs
e
re
c
o
v
e
ry
c
u
rr
e
n
t
I r
r
(A
)
R
e
v
e
rs
e
re
c
o
v
e
ry
ti
m
e
t r
r
(n
s
)
Forward crrent
IF (A)
1000
10
0
200
300
600
100
400
500
trr
Irr
Common cathode
di / dt = 2000A / s
VGE = 10V VCC = 600V
: Tj = 25°C
: Tj = 125°C
Edsw – IF
Forward crrent
IF (A)
R
e
v
e
rs
e
re
c
o
v
e
ry
lo
s
E
d
s
w
(m
J
)
10
1
0
200
300
600
1
100
400
500
Common cathode
di / dt = 2000A / s
VGE = 10V
VCC = 600V
: Tj = 25°C
: Tj = 125°C
C
– VCE
Collector-emitter voltage
VCE (V)
C
a
p
a
c
it
a
n
c
e
C
(p
F
)
500000
300
0.01
3000
300000
1000
3
10
100
1
30
100000
0.03
30000
10000
0.1
0.3
Cies
Coes
Cres
Collector-emitter voltage
VCE (V)
Short Circuit Soa
C
o
lle
c
to
r
c
u
rr
e
n
t
I C
(A
)
5000
0
1200
1600
1000
800
400
2000
3000
4000
RG = 7.5Ω
VGE = ±15V
Tj
125°C
tw
10 s
Gate resistance
RG ( )
Short Circuit
tw – RG
P
u
ls
e
w
id
th
t w
(s
)
20
0
15
10
5
4
8
12
20
16
VCC = 950V
VGE =±15V
Tj = 25°C
Common emitter
VGE = 0
f = 1MHz
Tj = 25°C
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