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参数资料
| 型号： | MG800J2YS50A |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 800 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-11 |
| 文件页数： | 1/6页 |
| 文件大小： | 410K |
| 代理商： | MG800J2YS50A |
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD
Compact IGBT
Series Module
800 Amperes/600 Volts
MG800J2YS50A
1
7/05
Description:
Powerex Dual IGBTMOD
Compact IGBT Series Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge conguration, with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplied system assembly and
thermal management.
Features:
Over-Current and
Over-Temperature Protection
Low VCE(sat)
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. MG800J2YS50A is a
600V (VCES), 800 Ampere
Dual IGBTMOD Compact IGBT
Series Module.
Type
Current Rating
VCES
Amperes
Volts (x 10)
MG
800
60
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.92±0.04
125.0±1.0
B
3.78±0.04
96.0±1.0
C
0.84±0.04
21.3±1.0
D
4.49±0.03
113.0±0.8
E
3.30±0.03
84.0±0.8
F
0.86±0.04
22.0±1.0
G
1.46±0.04
37.0±1.0
H
0.75±0.04
19.0±1.0
J
0.71±0.04
18.0±1.0
K
0.73±0.04
18.6±1.0
L
0.59±0.04
15.0±1.0
M
3.66±0.03
93.0±0.8
Dimensions
Inches
Millimeters
N
0.07±0.04
1.8±1.0
P
1.24±0.04
31.5±1.0
Q
0.40±0.03
10.2±0.8
R
0.34±0.03
8.7±0.8
S
4.92±0.04
125.0±1.0
T
1.24-0.01/+0.04 31.5+2.0/-0.8
U
1.81±0.04
46.0±1.0
V
0.22±0.04
5.6±1.0
W
0.63±0.03
16.0±0.8
X
0.21 Dia.
5.5 Dia.
Y
M8 Metric
M8
TH1
TH2
FO1
E1
G1
FO2
E2
G2
C2E1
E2
C1
V
L
V
L
G1
FO1
TH1
TH2
E1
G2
FO2
E2
C1
E1/C2
A
D
H
F
W
E
B
G
U
G
S
Q
R
P
T
J
K
M
DETAIL "A"
X (4 PLACES)
Y (3 PLACES)
#110 TAB
(8 PLACES)
N
C
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