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参数资料
| 型号： | MGF0840G |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| 封装： | GF-7, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 代理商： | MGF0840G |
Mitsubishi Semiconductors < GaN HEMT >
MGF0840G
10 W GaN HEMT [ non-matched ]
Nov. / 2010
1
CSTG-XXXXX
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
0
.
6
5
GF-7
1
.
6
5
0
.
1
14.0
9.0±0.2
③
5.0
1
.
9
±
0
.
4
OUTLINE DRAWING
②
φ2.2
0.6±0.2
②
Unit : m illim eters
①
2
M
I
N
4
.
4
+
0
/
-
0
.
3
2
M
I
N
DESCRIPTION
The MGF0840G, GaN HEMT with an N-channel schottky
Gate, is designed for MMDS/UMTS/WiMAX applications.
FEATURES
High voltage operation : VDS = 47 V
High output power : Po = 40.0 dBm (typ.) @ P3dB
High efficiency : d = 60 % (typ.) @ P3dB
Designed for use in Class AB linear amplifiers
APPLICATIONS
MMDS/UMTS/WiMAX
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds = 47 V Ids = 90 mA Rg = 120
Packaging
4 inch Tray ( 25 pcs)
C
- 65 to +175
Storage temperature
Tstg
C
230
Channel temperature
Tch
mA
+ 30
Forward gate current
IGF
mA
-1.5
Reverse gate current
IGR
W
21
Total power dissipation
PT
V
-10
Gate to Source Voltage
VGS
V
120
Drain to Source Voltage
VDS
Unit
Ratings
Parameter
Symbol
Absolute maximum ratings (Ta = 25 C)
C/W
9.7
6.8
–
Vf Method
Thermal resistance *2
Rth(ch-c)
dB
–
14.0
13.0
*1 : Pin=20dBm
Linear power gain
GLP *1
%
–
60
–
Drain efficiency
d
dBm
–
40.0
39.0
VDS = 47 V, IDQ = 90 mA,
f = 2.6 GHz
3dB gain compression power
P3dB
V
-5.0
-
-1.0
VDS = 47 V, IDS = 3 mA
Gate to source cut-off
voltage
VGS(off)
Max.
Typ.
Min.
Unit
Limits
Test conditions
Parameter
Symbol
Electrical characteristics ( Ta = 25 C)
*2 : Channel to case
Specifications are subject to change without notice.
相关PDF资料 |
PDF描述 |
|---|---|
| MGF0843G | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| MGF0909A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0912A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0919A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| MGF0919A | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0843G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0846G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0904 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
| MGF0904A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
| MGF0904A_1 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
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