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参数资料
| 型号： | MGF0913A-03 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, SMD, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 44K |
| 代理商： | MGF0913A-03 |
Mitsubishi Electric
June/2004
MGF0913A
S PARAMETERS
(Ta=25
°C,VD=10V,ID=200mA, Reference Plane see Fig.1)
Fig.1 OUTLINE DRAWING
0.80
0.25
(1) Gate
(2) Drain
(3) Source
4.00
(2)
0.3
Gate Mark
Round corner
(1)
4.20
(2)
BACK SIDE PATTERN
2.5
(Unit:mm)
0.6
2.0
0.8
(1)
(3)
Gate Mark
2.8
1.20
Reference Plane
freq.
K
MAG/MSG
(MHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(dB)
600
0.846
-99.11
7.877
113.45
0.032
41.63
0.241
-112.66
0.45
23.91
1000
0.795
-129.78
5.523
91.49
0.038
29.94
0.296
-126.47
0.68
21.62
1400
0.758
-147.40
4.105
74.02
0.043
23.18
0.335
-132.57
0.92
19.80
1800
0.733
-159.19
3.265
59.68
0.046
19.12
0.372
-135.16
1.14
16.26
2200
0.713
-168.29
2.755
47.38
0.049
16.24
0.412
-136.52
1.29
14.27
2600
0.696
-175.89
2.413
36.27
0.053
13.56
0.456
-137.70
1.34
13.08
3000
0.675
177.02
2.150
25.69
0.057
10.50
0.500
-138.96
1.39
12.05
3400
0.648
170.52
1.930
15.19
0.063
6.75
0.537
-140.26
1.41
11.04
3800
0.611
165.48
1.751
4.44
0.070
2.20
0.565
-141.48
1.47
9.91
4200
0.563
159.35
1.626
-6.74
0.079
-3.15
0.582
-142.64
1.53
8.84
4600
0.504
150.60
1.566
-18.46
0.091
-9.28
0.592
-143.97
1.53
8.08
5000
0.437
138.53
1.563
-30.74
0.104
-16.17
0.606
-145.86
1.45
7.78
5400
0.367
123.05
1.571
-43.58
0.118
-23.85
0.614
-148.72
1.38
7.57
5800
0.304
104.53
1.507
-56.94
0.134
-32.41
0.616
-152.68
1.35
6.95
6200
0.260
83.65
1.422
-70.83
0.151
-41.99
0.613
-157.29
1.34
6.26
6600
0.252
61.24
1.370
-85.27
0.168
-52.79
0.599
-160.95
1.30
5.82
7000
0.298
38.21
1.336
-100.37
0.185
-65.01
0.568
-161.71
1.25
5.60
7400
0.376
15.46
1.290
-116.34
0.202
-78.79
0.521
-160.65
1.20
5.32
7800
0.486
-6.26
1.213
-133.51
0.217
-94.17
0.469
-154.18
1.18
4.94
8200
0.622
-26.32
1.103
-152.37
0.227
-110.98
0.444
-141.91
1.13
4.65
8600
0.762
-44.27
0.963
-173.58
0.221
-128.75
0.503
-128.51
1.09
4.60
9000
0.864
-59.90
0.804
167.54
0.201
-146.58
0.605
-122.63
1.06
4.56
9400
0.931
-73.16
0.640
150.86
0.175
-163.02
0.708
-124.22
1.01
5.05
9800
0.969
-84.19
0.487
136.98
0.150
-175.89
0.789
-128.49
0.95
5.11
10200
0.985
-93.24
0.359
125.65
0.129
173.23
0.844
-134.30
0.92
4.45
10600
0.988
-100.63
0.264
116.52
0.112
163.85
0.877
-140.83
0.93
3.72
11000
0.986
-106.66
0.207
109.19
0.099
155.65
0.898
-147.37
0.97
3.20
11400
0.984
-111.48
0.179
103.32
0.089
148.28
0.916
-153.31
0.99
3.03
11800
0.983
-115.02
0.161
98.69
0.080
141.70
0.933
-158.19
1.00
3.04
12200
0.977
-116.79
0.119
95.29
0.071
136.14
0.939
-161.64
1.12
0.17
S11
S21
S12
S22
相关PDF资料 |
PDF描述 |
|---|---|
| MGF0913A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0915A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0915A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0916A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0916A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0915A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET |
| MGF0915A_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET |
| MGF0915A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0916A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0916A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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