参数资料
型号: MGF0913A
元件分类: 功率晶体管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, JFET
封装: HERMETIC SEALED, SMD, 3 PIN
文件页数: 2/4页
文件大小: 44K
代理商: MGF0913A
Mitsubishi Electric
June/2004
MGF0913A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
0
5
10
15
20
25
30
35
0
5
10
15
20
25
Pin(dBm)
Gp(dB)
,Po(dBm)
0
10
20
30
40
50
60
70
PAE(%)
Vds=10V
Ids(off)=200mA
f=1.9GHz
Po
PAE
Gp
IM3,Po(SCL) vs. Pi(SCL)
-50
-40
-30
-20
-10
0
10
20
30
40
-15
-10
-5
0
5
10
15
20
Pi(SCL) (dBm)
Po(SCL)
(dBm)
-80
-70
-60
-50
-40
-30
-20
-10
0
10
IM3
(dBc)
Po
IM3
VD=10V
ID=200mA
f1=1.90GHz
f2=1.91GHz
相关PDF资料
PDF描述
MGF0915A-01 S BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGF0915A S BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGF0916A-03 S BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGF0916A-01 S BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGF0916A S BAND, GaAs, N-CHANNEL, RF POWER, JFET
相关代理商/技术参数
参数描述
MGF0913A_11 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0915A 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET
MGF0915A_03 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET
MGF0915A_11 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0916A 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)