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参数资料
| 型号： | MGF0915A-01 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, SMD, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 44K |
| 代理商： | MGF0915A-01 |
Mitsubishi Electric
June/2004
MGF0915A
S PARAMETERS
(Ta=25
°C, VDS=10V, ID=800mA, Reference Plane see Fig.1)
Fig.1 OUTLINE DRAWING
0.80
0.25
(1) Gate
(2) Drain
(3) Source
4.00
(2)
0.3
Gate Mark
Round corner
(1)
4.20
(2)
BACK SIDE PATTERN
2.5
(Unit:mm)
0.6
2.0
0.8
(1)
(3)
Gate Mark
2.8
1.20
Reference Plane
freq.
K
MAG/MSG
(MHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(dB)
600
0.948
-145.92
4.852
99.38
0.013
24.42
0.721
-177.51
0.38
25.72
1000
0.947
-161.85
2.941
86.78
0.015
26.56
0.717
-178.09
0.63
22.92
1400
0.946
-168.94
2.144
77.11
0.015
28.76
0.719
-178.44
0.84
21.55
1800
0.946
-173.55
1.746
69.39
0.016
30.92
0.725
-178.66
0.94
20.38
2200
0.945
-176.72
1.456
62.91
0.017
32.93
0.732
-178.82
1.03
18.23
2600
0.944
-178.89
1.211
57.13
0.018
34.72
0.739
-178.94
1.14
16.00
3000
0.942
178.80
1.032
51.69
0.019
36.22
0.745
-179.06
1.27
14.25
3400
0.939
177.37
0.934
46.34
0.020
37.37
0.749
-179.19
1.34
13.19
3800
0.935
174.73
0.888
40.95
0.022
38.13
0.751
-179.32
1.34
12.59
4200
0.930
171.44
0.836
35.45
0.024
38.46
0.751
-179.44
1.38
11.75
4600
0.925
167.90
0.759
29.81
0.027
38.33
0.749
-179.56
1.43
10.58
5000
0.918
164.36
0.798
24.04
0.031
37.72
0.745
-179.67
1.27
10.96
5400
0.911
160.93
0.730
18.15
0.035
36.59
0.740
-179.78
1.33
9.76
5800
0.903
157.60
0.715
12.14
0.039
34.92
0.732
179.67
1.32
9.23
6200
0.894
154.31
0.708
6.01
0.045
32.68
0.724
177.54
1.26
8.90
6600
0.884
150.88
0.707
-0.28
0.052
29.84
0.713
175.25
1.20
8.65
7000
0.871
147.10
0.711
-6.80
0.060
26.34
0.702
172.45
1.15
8.38
7400
0.855
142.73
0.721
-13.66
0.069
22.15
0.688
169.39
1.12
8.06
7800
0.833
137.52
0.739
-20.98
0.081
17.18
0.671
166.53
1.09
7.75
8200
0.807
131.21
0.765
-28.93
0.094
11.37
0.651
164.20
1.08
7.43
8600
0.778
123.58
0.802
-37.70
0.110
4.61
0.624
162.51
1.04
7.36
9000
0.748
114.45
0.849
-47.48
0.129
-3.21
0.590
161.19
1.00
8.18
9400
0.717
103.71
0.905
-58.48
0.152
-12.23
0.545
159.72
0.96
7.75
9800
0.688
91.34
0.964
-70.88
0.179
-22.60
0.487
157.44
0.93
7.31
10200
0.671
77.41
1.023
-84.83
0.211
-34.51
0.410
153.88
0.90
6.86
10600
0.672
62.12
1.072
-100.40
0.248
-48.17
0.311
149.13
0.86
6.36
11000
0.697
45.82
1.100
-117.62
0.293
-63.82
0.184
144.37
0.81
5.75
11400
0.746
29.03
1.095
-136.37
0.326
-81.74
0.021
-179.00
0.79
5.26
11800
0.812
12.43
1.038
-156.40
0.346
-102.24
0.194
-81.10
0.79
4.77
12200
0.877
-3.09
0.913
-177.29
0.346
-125.67
0.404
-95.22
0.79
4.21
S11
S21
S12
S22
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PDF描述 |
|---|---|
| MGF0915A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0916A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0916A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0916A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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| MGF0917A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0917A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0918A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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