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参数资料
| 型号： | MGF0916A-03 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, SMD, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 43K |
| 代理商： | MGF0916A-03 |
Mitsubishi Electric
June/2004
MGF0916A
S PARAMETERS
(Ta=25
°C, VDS=6V, ID=100mA, Reference Plane see Fig.1)
Fig.1 OUTLINE DRAWING
0.80
0.25
(1) Gate
(2) Drain
(3) Source
4.00
(2)
0.3
Gate Mark
Round corner
(1)
4.20
(2)
BACK SIDE PATTERN
2.5
(Unit:mm)
0.6
2.0
0.8
(1)
(3)
Gate Mark
2.8
1.20
Reference Plane
freq.
K
MAG/MSG
(MHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(dB)
600
0.954
-40.32
7.263
145.11
0.016
60.06
0.477
-37.47
0.25
26.57
1000
0.915
-62.48
6.256
126.36
0.023
45.59
0.509
-57.48
0.32
24.35
1400
0.887
-80.56
5.395
110.17
0.027
32.76
0.543
-73.42
0.37
23.01
1800
0.866
-95.15
4.664
96.15
0.029
21.52
0.578
-86.07
0.44
22.06
2200
0.852
-106.84
4.047
83.93
0.030
11.83
0.613
-96.10
0.51
21.30
2600
0.844
-116.18
3.529
73.20
0.030
3.59
0.646
-104.09
0.60
20.71
3000
0.829
-123.68
3.099
63.67
0.030
-3.30
0.679
-110.51
0.72
20.14
3400
0.822
-129.83
2.743
55.09
0.029
-8.97
0.708
-115.77
0.84
19.76
3800
0.813
-135.06
2.452
47.23
0.029
-13.57
0.736
-120.19
0.93
19.27
4200
0.806
-139.74
2.215
39.92
0.028
-17.24
0.760
-124.02
1.05
17.60
4600
0.802
-144.18
2.025
32.99
0.028
-20.15
0.782
-127.46
1.09
16.73
5000
0.792
-148.63
1.874
26.30
0.028
-22.48
0.801
-130.64
1.16
15.86
5400
0.779
-153.25
1.755
19.72
0.029
-24.39
0.817
-133.65
1.17
15.29
5800
0.763
-158.12
1.661
13.18
0.030
-26.06
0.831
-136.55
1.19
14.78
6200
0.741
-163.24
1.589
6.57
0.031
-27.67
0.843
-139.35
1.22
14.24
6600
0.714
-168.50
1.533
-0.16
0.033
-29.37
0.853
-142.06
1.23
13.79
7000
0.688
-173.69
1.490
-7.07
0.036
-31.33
0.861
-144.65
1.19
13.50
7400
0.660
-178.49
1.457
-14.20
0.038
-33.68
0.868
-147.09
1.21
13.08
7800
0.628
176.97
1.430
-21.60
0.041
-36.55
0.874
-149.36
1.21
12.67
8200
0.590
172.29
1.409
-29.29
0.044
-40.05
0.879
-151.43
1.23
12.17
8600
0.540
167.52
1.391
-37.32
0.047
-44.27
0.883
-153.28
1.27
11.56
9000
0.477
162.13
1.374
-45.70
0.050
-49.26
0.886
-154.93
1.33
10.94
9400
0.400
155.63
1.358
-54.48
0.054
-55.06
0.888
-156.42
1.36
10.41
9800
0.311
146.74
1.342
-63.70
0.057
-61.67
0.888
-157.81
1.40
9.95
10200
0.217
133.83
1.325
-73.41
0.061
-69.05
0.886
-159.22
1.40
9.62
10600
0.126
110.51
1.306
-83.66
0.065
-77.14
0.880
-160.83
1.39
9.31
11000
0.073
51.97
1.286
-94.52
0.070
-85.81
0.871
-162.85
1.36
9.08
11400
0.113
-5.75
1.262
-106.08
0.075
-94.92
0.857
-165.57
1.35
8.73
11800
0.188
-27.30
1.236
-118.45
0.081
-104.26
0.836
-169.37
1.36
8.26
12200
0.260
-36.27
1.206
-131.74
0.088
-113.56
0.806
-174.68
1.42
7.52
S11
S21
S12
S22
相关PDF资料 |
PDF描述 |
|---|---|
| MGF0916A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0916A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0917A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0918A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0918A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0917A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0917A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0918A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0918A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET |
| MGF0918A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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