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参数资料
| 型号： | MGF0919A-03 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 代理商： | MGF0919A-03 |
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0919A
L & S BAND / 1W
SMD non - matched
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
High power gain
Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
add=37%(TYP.) @f=1.9GHz,Pin=12dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=300mA
Rg=500
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
800
mA
IGR
Reverse gate current
-2.4
mA
IGF
Forward gate current
10
mA
PT
Total power dissipation
6
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
600
800
mA
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=2.0mA
-1
-
-5
V
gm
Transconductance
VDS=3V,ID=300mA
-
260
-
mS
Po
Output power
VDS=10V,ID=300mA,f=1.9GHz
28
30
-
dBm
add
Power added Efficiency
Pin=12dBm
-
37
-
%
GLP
Linear Power Gain
17
19
-
dB
NF
Noise figure
VDS=10V,ID=300mA,f=1.9GHz
-
1.2
-
dB
Rth(ch-c)
Thermal Resistance
*1
Vf Method
-
17
25
C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Fig.1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0920A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ] |
| MGF0920A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0921A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0921A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0951P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET Plastic Mold Lead-less PKG |
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